TITLE

High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

AUTHOR(S)
Dazeng Feng; Shirong Liao; Po Dong; Ning-Ning Feng; Hong Liang; Dawei Zheng; Cheng-Chih Kung; Fong, Joan; Shafiiha, Roshanak; Cunningham, Jack; Krishnamoorthy, Ashok V.; Asghari, Mehdi
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p261105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate a compact, high speed Ge photodetector efficiently butt-coupled with a large cross-section silicon-on-insulate (SOI) waveguide in which the Ge p-i-n junction is placed in the horizontal direction to enable very high speed operation. The demonstrated photodetector has an active area of only 0.8×10 μm2, greater than 32 GHz optical bandwidth, and a responsivity of 1.1 A/W at a wavelength of 1550 nm. Very importantly the device can readily be integrated with high performance wavelength-division-multiplexing filters based on large cross-section SOI waveguide to form monolithic integrated silicon photonics receivers for multichannel terabit data transmission applications.
ACCESSION #
47244472

 

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