TITLE

Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth

AUTHOR(S)
Rui Chen; Phann, S.; Sun, H. D.; Zhuang, Q.; Godenir, A. M. R.; Krier, A.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p261905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.
ACCESSION #
47244456

 

Related Articles

  • Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy. Metcalfe, Grace D.; Readinger, Eric D.; Shen, Hongen; Woodward, Nathaniel T.; Dierolf, Volkmar; Wraback, Michael // Journal of Applied Physics;Mar2009, Vol. 105 Issue 5, pN.PAG 

    We present the Stark energy sublevels of Nd3+ ions in GaN grown by plasma-assisted molecular beam epitaxy as determined by luminescence spectra. We correlate the photoluminescence spectra with transitions from the 4F3/2 excited state to the 4I9/2, 4I11/2, and 4I13/2 multiplets of the Nd3+ ion...

  • A photoluminescence and Hall-effect study of GaSb grown by molecular-beam epitaxy. Lee, M.; Nicholas, D. J.; Singer, K. E.; Hamilton, B. // Journal of Applied Physics;4/15/1986, Vol. 59 Issue 8, p2895 

    Investigates the unintentional growth of doped gallium antimonide (GaSb) through molecular-beam epitaxy on gallium arsenide and GaSb. Description of the device structure; Analysis on the photoluminescence of bulk GaSb; Growth morphology of GaSb.

  • Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy. Kong, W.; Jiao, W. Y.; Li, J. C.; Collar, K.; Kim, T. H.; Leach, J. H.; Brown, A. S. // Applied Physics Letters;7/22/2015, Vol. 107 Issue 3, p1 

    The strain dynamic of thin film AlN is investigated before and after the deposition of a GaN epitaxial layer using plasma assisted molecular beam epitaxy. X-ray diffraction ω/2θ -scan and asymmetric reciprocal space mapping analysis show that the deposition of GaN alters the strain state...

  • Strong blue emission from As doped GaN grown by molecular beam epitaxy. Winser, A. J.; Winser, A.J.; Novikov, S. V.; Novikov, S.V.; Davis, C. S.; Davis, C.S.; Cheng, T. S.; Cheng, T.S.; Foxon, C. T.; Foxon, C.T.; Harrison, I. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    Arsenic doped GaN grown by molecular beam epitaxy has been studied by room temperature photoluminescence. In addition to the wurzite band edge transition, luminescence from the cubic phase and very strong blue emission at ∼2.6 eV are observed. The intensities of the blue and the cubic band...

  • Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy. Reshchikov, M. A.; Visconti, P.; Morkoc¸, H. // Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p177 

    We have studied the broad blue band, which emerges in the photoluminescence (PL) spectrum of c-plane GaN layers after etching in hot H[sub 3]PO[sub 4] and subsequent exposure to air. This band exhibited a 100 meV blueshift with increasing excitation intensity and a thermal quenching with...

  • Temperature dependence of the fundamental band gap of InN. Wu, J.; Walukiewicz, W.; Shan, W.; Yu, K. M.; Aaer III, J. W.; Li, S. X.; Hailer, F. F.; Lu, Hai; Schaff, William J. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4457 

    The fundamental band gap of InN films grown by molecular beam epitaxy have been measured by transmission and photoluminescence spectroscopy as a function of temperature. The band edge absorption energy and its temperature dependence depend on the doping level. The band gap variation and Varshni...

  • Direct and indirect excitation of Er[sup 3+] ions in Er: AIN. Wu, X.; Hommerich, U. // Applied Physics Letters;4/21/1997, Vol. 70 Issue 16, p2126 

    Examines photoluminescence excitation and time-resolved photoluminescence measurements on erbium doped aluminum nitride. Growth of erbium:aluminum nitride film by metal organic molecular beam epitaxy; Result of erbium concentration; Observation of decay patterns; Life span of erbium[sup 3+]...

  • Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template. Reshchikov, M. A.; Huang, D.; Yun, F.; He, L.; Morkoc¸, H.; Reynolds, D. C.; Park, S. S.; Lee, K. Y. // Applied Physics Letters;12/3/2001, Vol. 79 Issue 23, p3779 

    Photoluminescence (PL) studies were performed on a 1.5-μm-thick GaN layer grown by molecular-beam epitaxy on a freestanding GaN template that in turn was grown by hydride vapor-phase epitaxy. PL spectra from both the epilayer and the substrate contain a plethora of sharp peaks related to...

  • Evidence for multiple atomic structure for the {1010} inversion domain boundaries in GaN layers. Potin, V.; Nouet, G.; Ruterana, P. // Applied Physics Letters;2/15/1999, Vol. 74 Issue 7, p947 

    Investigates the atomic structure of the inversion domain boundaries in gallium nitride layers grown by molecular beam epitaxy. Proposed method based on the comparison of the stacking sequences of gallium nitride on both of the boundary to distinguish between different models; Evidence shown...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics