TITLE

Capacitance-voltage and current-voltage characteristics of graphite oxide thin films patterned by ultraviolet photolithography

AUTHOR(S)
In-yeal Lee; Kannan, E. S.; Gil-Ho Kim
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p263308
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical characteristics of graphite oxide (GO) thin films deposited on a p-type silicon substrate were investigated to explore its potential application as a dielectric material in organic field effect transistors. Channel current in the GO films exhibited linear response with the applied bias in the positive voltage regime and increased exponentially for negative source-drain bias. This rectifying behavior arises due to the Coulombic interaction between the electrons emitted from the metal contact and the space charge region in the GO film. A clockwise hysteresis loop was observed in the capacitance-voltage characteristics due to the presence of traps at the interface.
ACCESSION #
47244444

 

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