TITLE

Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization

AUTHOR(S)
Winter, Rebecca; Hammer, Maria S.; Deibel, Carsten; Pflaum, Jens
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p263313
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused by the functionalization and to an additional tunneling barrier enhancing the on/off ratios. This barrier yields to activation energies of 37 meV (NL) and 104 meV (PQ) below 190 K, which are smaller than without functionalization, 117 meV.
ACCESSION #
47244432

 

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