TITLE

Blue-enhanced thin-film photodiode for dual-screen x-ray imaging

AUTHOR(S)
Vygranenko, Y.; Sazonov, A.; Heiler, G.; Tredwell, T.; Vieira, M.; Nathan, A.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p263505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm2 and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.
ACCESSION #
47244431

 

Related Articles

  • Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm. Pengzhan Zhang; Kunji Chen; Hengping Dong; Pei Zhang; Zhonghui Fang; Wei Li; Jun Xu; Xinfan Huang // Applied Physics Letters;7/7/2014, Vol. 105 Issue 1, p1 

    We reported the study on the photoluminescence internal quantum efficiency (PL IQE) and external quantum efficiency (PL EQE) from the amorphous silicon oxynitride (a-SiNO) films, which were fabricated by plasma-enhanced chemical vapor deposition followed by in situ plasma oxidation. We employed...

  • Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors. Chen, G.; Huang, E. K.; Hoang, A. M.; Bogdanov, S.; Darvish, S. R.; Razeghi, M. // Applied Physics Letters;11/19/2012, Vol. 101 Issue 21, p213501 

    By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to...

  • High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells. Miyajima, Shinsuke; Irikawa, Junpei; Yamada, Akira; Konagai, Makoto // Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023504 

    We developed a highly transparent n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C–SiC:H) emitter for crystalline silicon (c-Si) heterojunction solar cells. A low emitter saturation current density (J0e) of 1.4×101 fA/cm2 was obtained under optimal deposition...

  • Spectroscopic investigations of dark Si nanocrystals in SiO2 and their role in external quantum efficiency quenching. Limpens, Rens; Gregorkiewicz, Tom // Journal of Applied Physics;Aug2013, Vol. 114 Issue 7, p074304 

    The percentage of dark silicon nanocrystals, i.e., the nanocrystals that are not able to radiatively recombine after absorption of a photon, is investigated by combining measurements of external and internal quantum efficiencies. The study is conducted on samples prepared by co-sputtering and...

  • Molecular beam epitaxy-grown wurtzite MgS thin films for solar-blind ultra-violet detection. Lai, Y. H.; He, Q. L.; Cheung, W. Y.; Lok, S. K.; Wong, K. S.; Ho, S. K.; Tam, K. W.; Sou, I. K. // Applied Physics Letters;4/29/2013, Vol. 102 Issue 17, p171104 

    Molecular beam epitaxy grown MgS on GaAs(111)B substrate was resulted in wurtzite phase, as demonstrated by detailed structural characterizations. Phenomenological arguments were used to account for why wurtzite phase is preferred over zincblende phase or its most stable rocksalt phase. Results...

  • Transparent organic photodiodes with high quantum efficiency in the near infrared. Campbell, I. H. // Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p033303 

    We demonstrate organic photodiodes with a transparency of ∼80% throughout the visible spectrum and with up to ∼80% external quantum efficiency (EQE) in the near infrared under reverse bias. The diodes use thin films of soluble naphthalocyanine (Nc) molecules prepared by spin casting,...

  • Vertical polymer phototransistor featuring photomultiplication due to base-field shielding. Zan, Hsiao-Wen; Tsai, Wu-Wei; Meng, Hsin-Fei // Applied Physics Letters;1/31/2011, Vol. 98 Issue 5, p053305 

    We introduce a vertical polymer phototransistor with low operational voltage (-1.5 V). A blended polymer layer with both acceptor and donor materials was used as a channel material in the vertical space-charge-limited transistor. Under illumination, we obtained external quantum efficiency (EQE)...

  • A COMPARATIVE STUDY OF BSF LAYERS FOR ULTRA-THIN CdS:O/CdTe SOLAR CELLS. Islam, M. A.; Sulaiman, Yusuf; Amin, Nowshad // Chalcogenide Letters;Feb2011, Vol. 8 Issue 2, p65 

    Due to high electron affinity and consequently large work function of CdTe, the CdTe based solar cells are suffering from ohmic contacting problem at the back contact. Among the several numbers of methods still used try to overcome the ohmic contacting problem, the use of back surface field...

  • Photocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating coupler. Söderström, Karin; Haug, Franz-Josef; Escarré, Jordi; Cubero, Oscar; Ballif, Christophe // Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213508 

    Angle resolved measurements of the external quantum efficiency of n-i-p single junction amorphous solar cell deposited on a grating structure show clearly defined peaks of enhanced photocurrent in the weakly absorbing region between 1.6 and 2.15 eV. We explain these absorption phenomena and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics