High-field Hall effect and magnetoresistance in Fe3O4 epitaxial thin films up to 30 Tesla

Fernández-Pacheco, A.; Orna, J.; De Teresa, J. M.; Algarabel, P. A.; Morellon, L.; Pardo, J. A.; Ibarra, M. R.; Kampert, E.; Zeitler, U.
December 2009
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p262108
Academic Journal
We have measured the Hall effect and the magnetoresistance of epitaxial Fe3O4 thin films grown on MgO (001) in magnetic fields up to 30 T. Using such high fields, it is possible to magnetically saturate films thicker than 40 nm, providing access to intrinsic conduction properties. We find an effective electron density corresponding to 1 electron per f.u. A smaller value is obtained for thinner films, caused by the increasing density of antiphase boundaries defects. The magnetoresistance is not saturating at 30 T, showing linear dependence at high fields, and peaks at the Verwey transition.


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