TITLE

Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge

AUTHOR(S)
Vincent, B.; Vandervorst, W.; Caymax, M.; Loo, R.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p262112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports on the Ge segregation mechanism occurring during ultrathin (few monolayers) Si cap growth on Ge substrates by reduced pressure chemical vapor deposition. Thanks to extremely low energy secondary ion mass spectroscopy, we have highlighted that Ge segregation in Si-covered Ge does not depend on the growth temperature (in the 350–500 °C range) or on the carrier gas (H2,N2) used during Si growth. Solely the Si precursor used, i.e., the Si incorporation mechanism, impacts the Ge segregation rate. A multi-Ge segregation model is proposed, considering probabilities of sites exchanges in between all Si–Ge stacked atoms within the first nanometer of the layers.
ACCESSION #
47244418

 

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