Electric-field-controlled directional motion of ferroelectric domain walls in multiferroic BiFeO3 films

Kim, T. H.; Baek, S. H.; Yang, S. M.; Jang, S. Y.; Ortiz, D.; Song, T. K.; Chung, J.-S.; Eom, C. B.; Noh, T. W.; Yoon, J.-G.
December 2009
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p262902
Academic Journal
We describe the directional ferroelectric domain wall motion in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A structural analysis of the film shows that a strain gradient is developed in our film, which creates a symmetry breaking in a ferroelectric double-well potential. The asymmetric double-well potential can cause ferroelectric domain walls to move sideways with preferred directionality under a vertical electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.


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