Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

Seunghyup Lee; Heejin Kim; Dong-Jin Yun; Shi-Woo Rhee; Kijung Yong
December 2009
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p262113
Academic Journal
This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.


Related Articles

  • Editorial. Agrawal, Vishwani // Journal of Electronic Testing;Apr2014, Vol. 30 Issue 2, p155 

    An introduction to the journal is presented wherein the editor discusses articles published within the issue on topics including margins for the screening test of an static random access memory (SRAM), a method to recover from failures in memories, and testing of radio frequency (RF) components.

  • See-thru phones on their way.  // New Scientist;12/20/2008, Vol. 199 Issue 2687, p23 

    The article on the world's first transparent flash memory chip. A new memory chip has been made by engineers at Korea's Advanced Institute of Science and Technology in Taejon-si, Korea, which records data by changing the resistance of a metal oxide film, a technology known as resistive RAM or...

  • Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition. Zhang, Jian; Yang, Hui; Zhang, Qilong; Jiang, Hao; Luo, Jikui; Zhou, Juehui; Dong, Shurong // Applied Physics A: Materials Science & Processing;Aug2014, Vol. 116 Issue 2, p663 

    In situ and ex situ oxygen plasma treatment (OPT) were applied to treat ZnO thin films deposited by thermal atomic layer deposition (T-ALD), and the resistive switching (RS) behaviors of the films were investigated. For the in situ OPT, the treatment was applied after each T-ALD cycle. For the...

  • Influence of surface null potential on nonvolatile bistable resistive switching memory behavior of dilutely aluminum doped ZnO thin film. Shirolkar, Mandar M.; Hao, Changshan; Yin, Shiliu; Li, Ming; Wang, Haiqian // Applied Physics Letters;6/17/2013, Vol. 102 Issue 24, p243501 

    We report a correlation between surface null potential and bistable resistive switching effect in dilutely Al-doped ZnO nearly transparent thin film. The nearly symmetrical bistable resistive switching was observed at low operating potential (±1 V) with good repeatability and stability,...

  • RCA Computer Memory Uses Superconductivity. Scrupski, Steve // Electronic Design;07/10/2000, Vol. 48 Issue 14, p72 

    Features a report on computer memory originally published in the July 8, 1960, issue of the `Electronic Design' publication. Development by Radio Corporation of America of a computer memory made from a continuous sheet of superconductive material; Advantages of using persistent supercurrents...

  • DDR FCRAM Boosts Performance In DDR SDRAM Designs. Alim, Wasim; Sanii, Behzad; Vargo, William // Electronic Design;9/2/2002, Vol. 50 Issue 18, p55 

    Focuses on the double-data-rate, fast-cycle random access memory. Core segmentation into smaller memory subarrays for lower power consumption; Simultaneous execution of three commands.

  • A new spin on memory.  // Machine Design;8/9/2001, Vol. 73 Issue 15, p44 

    Reports on the claim of scientists at Johns Hopkins University in Maryland that a half-metallic ferromagnet could revolutionize computer memory. Capabilities of Cr02 magnetic random-access memory (MRAM); Necessity of harnessing electron spin for MRAM and related technologies.

  • Silicon Valley Direct. Rosen, Carol // ECN: Electronic Component News;Oct2000, Vol. 44 Issue 11, p65 

    Focuses on the supply of dynamic random access memories in the United States. Introduction of Radiata's wireless engine chip set; LSI Logic's transceiver core and package.

  • RDRAM Test Strategy in 2000 and Beyond. Graybeal, Robert; Shitara, Tomoya // ECN: Electronic Component News;May2000 Special Issue, Vol. 44 Issue 6, p11 

    Focuses on technologies relating to testing of RDRAM computer memory systems. Basic categories of tests required; Input/output interface test; Long-cycle data retention testing; Short-cycle data access operation tests; Manufacturing focus on reducing test cost by utilizing various equipment;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics