TITLE

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

AUTHOR(S)
Seunghyup Lee; Heejin Kim; Dong-Jin Yun; Shi-Woo Rhee; Kijung Yong
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p262113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.
ACCESSION #
47244411

 

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