TITLE

Band gap engineering of thin-film electroluminescent devices

AUTHOR(S)
Krasnov, Alexey N.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3223
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We introduce an alternative concept to increase the efficiency and brightness of thin-film electroluminescent (TFEL) devices. The method utilizes band gap engineering of the active layer of the device. The initial steps of our work using a ZnS[sub x]Se[sub 1-x] alloy are also presented to demonstrate the workability of the method. This letter discusses the related obstacles and future potentials of the band gap engineering for monochrome and color TFEL devices. © 2001 American Institute of Physics.
ACCESSION #
4715247

 

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