Band gap engineering of thin-film electroluminescent devices

Krasnov, Alexey N.
May 2001
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3223
Academic Journal
We introduce an alternative concept to increase the efficiency and brightness of thin-film electroluminescent (TFEL) devices. The method utilizes band gap engineering of the active layer of the device. The initial steps of our work using a ZnS[sub x]Se[sub 1-x] alloy are also presented to demonstrate the workability of the method. This letter discusses the related obstacles and future potentials of the band gap engineering for monochrome and color TFEL devices. © 2001 American Institute of Physics.


Related Articles

  • Effect of carrier trapping time on performance of alternating-current thin-film electroluminescent devices. Krasnov&hthinsp;, Alex N.; Hofstra, Peter G. // Journal of Applied Physics;9/1/2001, Vol. 90 Issue 5 

    In spite of a significant number of studies on memory effect in alternating-current thin-film electroluminescent devices, the phenomenon is still unclear. In the present work we investigate some peculiarities of memory behavior of the devices from the viewpoint of the nonequilibrium carrier...

  • Physics update. Schewe, Phillip F. // Physics Today;Mar97, Vol. 50 Issue 3, p9 

    Describes the thin film electroluminescent (TFEL) devices with a host material such as zinc sulfide doped with luminescing centers such as manganese atoms. How the concept of TFEL has been developed at the Georgia Institute of Technology; The efficiency of the TFEL.

  • High-brightness green-emitting electroluminescent devices with ZnS:Tb,F active layers. Ogura, T.; Mikami, A.; Tanaka, K.; Taniguchi, K.; Yoshida, M.; Nakajima, S. // Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1570 

    The dependence of brightness on the concentration ratio of fluorine to terbium was studied in thin-film electroluminescent devices with rf-sputtered ZnS:Tb,F active layers. It was found that the device exhibits a maximum brightness at the concentration ratio of about 1. By optimizing not only...

  • Organic-inorganic heterojunction light emitting diodes based on poly(p-phenylene vinylene).... Kumar, N. Deepak; Joshi, Mukesh P. // Applied Physics Letters;9/8/1997, Vol. 71 Issue 10, p1388 

    Examines the fabrication and characterization of inorganic-organic thin film electroluminescence devices. Use of wet chemical processing to fabricate the devices; Importance of inorganic semiconductor in the charge transporting process; Role of organic emitters in high luminescence quantum...

  • High luminous efficiency thin-film electroluminescent devices with low resistivity insulating materials. Hsu, C. T.; Li, J. W.; Liu, C. H.; Su, Y. K.; Wu, T. S.; Yokoyama, M. // Journal of Applied Physics;2/1/1992, Vol. 71 Issue 3, p1509 

    Presents a study which examined the electrical and optical performances of electroluminescent devices with low resistivity insulating materials. Background information on thin film electroluminescent devices; Experimental procedure; Results and discussion.

  • The Effect of Space Charge on the Characteristics of ZnS Thin-Film Electroluminescent Devices. Gurin, N. T.; Sabitov, O. Yu.; Shlyapin, A. V. // Technical Physics;Aug2001, Vol. 46 Issue 8, p977 

    From experimental time dependences of the instantaneous brightness and the total current passing through a ZnS : Mn thin-film electroluminescent device, capacitance-voltage, charge-voltage, and currentvoltage characteristics of the device are calculated. Conditions for negative differential...

  • Luminescence and electron paramagnetic resonance studies of white-light emitting SrS: Pr, F thin film electroluminescent devices. Lee, Y. H.; Ju, B. K.; Yeom, T. H.; Kim, D. H.; Hahn, T. S.; Choh, S. H.; Oh, M. H. // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1754 

    Presents a study which investigated the fluorescence emission and excitation spectra of white-light emitting strontium sulphur: praseodymium, fluoride thin film electroluminescent devices. Experimental methods; Results and discussion; Analysis of the hyperfine structure of an isolated...

  • LED headlights.  // EDN Europe;Feb2006, Vol. 51 Issue 2, p50 

    The article features a series of Golden Dragon light emitting diodes from Osram, which produces white light and is suitable for use in automotive daylight running light applications. The unit utilizes thin-film technology to ensure that almost all the light produced emerges from the surface. The...

  • Charge recombination electroluminescence in organic thin-film devices without charge injection from external electrodes. Tsutsui, Tetsuo; Sang-Bong Lee; Fujita, Katsuhiko // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2382 

    Organic thin-film electroluminescent (EL) devices with a double-insulated structure, Al electrode/polymer insulator layer/ambipolar EL layer/ITO nanoparticles layer/ambipolar EL layer/polymer insulator layer/ITO electrode, were fabricated. The ambipolar EL layer was the composition of poly...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics