Photo-enhanced negative differential resistance and photo-accelerated time-dependent dielectric breakdown in thin nitride-oxide dielectric film

Chen, Fen; Li, Baozhen; Jammy, Rajarao; Dufresne, Roger A.; Strong, Alvin W.
May 2001
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3241
Academic Journal
Photo-enhanced negative differential resistance (NDR) and photo-accelerated time-dependent dielectric breakdown (TDDB) were observed in thin nitride-oxide (N-O) dielectric film biased with gate negative under tungsten lamp illumination. The photo-induced leakage current and photo-accelerated TDDB show dramatic asymmetry under negative and positive gate bias with constant photo-illumination. Our experiments suggest a unique current conduction mechanism in this nitride thin film. A two-carrier conduction induced positive feedback transport process under negative gate bias, and a two-carrier conduction induced self-limiting transport process under positive gate bias are proposed to qualitatively explain the experimental data. The nitride thin film device possessing a light-enhanced NDR can be employed to develop Si-based optoelectronic devices such as switching and logic control. © 2001 American Institute of Physics.


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