TITLE

Characteristics of n[sup +]-p junction leakage induced by tantalum pentoxide gate insulator and gate reoxidation

AUTHOR(S)
Kang, Chang-Yong; Kim, Young-Gwan; Kang, Dae-Gwan
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3244
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter will present the n[sup +]-p junction characteristics in tantalum pentoxide gate dielectric (Ta[sub 2]O[sub 5]) and gate reoxidation ambient. The n[sup +]-p junctions in n-type metal-oxide-silicon field effect transistor fabricated with different gate dielectrics and post-thermal conditions were characterized by current-voltage measurements. The current-voltage measurements of junction leakage of Ta[sub 2]O[sub 5] gate dielectric without gate reoxidation (MT1) show the hump characteristics due to the precipitates of oxide near the junction depletion regime. And their leakage mechanism is phonon-assisted tunneling, which facilitates the hopping of electrons from the valence band into the shallow attractive Coulomb center via the interface states in the precipitate, leaving holes in the valence band. However, the junction leakage currents of Ta[sub 2]O[sub 5] dielectric with gate reoxidation in hydrogen rich ambient (MT2) are higher than those of thermal oxide samples and their leakage mechanism is Schottky barrier lowering due to the enhanced diffusion of oxygen into the junction depletion region. © 2001 American Institute of Physics.
ACCESSION #
4715238

 

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