TITLE

Photon-induced current of polycrystalline-silicon thin-film transistors

AUTHOR(S)
Ikeda, H.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3259
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photon-induced current (I[sub ph]) in polycrystalline-silicon thin-film transistors (poly-Si TFTs) has been investigated using a line-shaped light beam scanning method. In the off-state region, photon-excited carriers in the channel region diffuse to the drain with the diffusion length independent of the poly-Si grain size. The diffusion length is also independent whether poly-Si is hydrogenated or not. This phenomenon is observed in both n-channel and p-channel TFTs. In the subthreshold region, I[sub ph] follows the general transport equation in poly-Si. In the inversion region, I[sub ph] is proportional only to the total amount of excited carriers in the channel. © 2001 American Institute of Physics.
ACCESSION #
4715231

 

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