TITLE

Optimization of electronic-band alignments at ferroelectric (Zn[sub x]Cd[sub 1-x])S/Si(100) interfaces

AUTHOR(S)
Hotta, Y.; Rokuta, E.; Tabata, H.; Kobayashi, H.; Kawai, T.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3283
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have obtained ferroelectric characteristics from nonoxide (Zn[sub x]Cd[sub 1-x])S (x=0.1-0.3) thin films. On the basis of x-ray photoelectron and visible-ultraviolet light absorption spectroscopy measurements, the conduction-band discontinuity at the (Zn[sub x]Cd[sub 1-x])S/Si(100) interfaces is found to vary between 0.4 and 1.3 eV with a change in composition x between 0.1 and 0.9. The leakage current density, which strongly depends on the conduction-band discontinuity, is reduced to less than 10[sup -6] A/cm[sup 2] at a gate voltage of 4 V. © 2001 American Institute of Physics.
ACCESSION #
4715222

 

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