TITLE

Improved electrical properties of (Pb, La)TiO[sub 3] thin films using compositionally and structurally compatible LaNiO[sub 3] thin films as bottom electrodes

AUTHOR(S)
Bao, Dinghua; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu; Yao, Xi
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3286
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Homogeneous LaNiO[sub 3] thin films were grown on thermally oxidized silicon (SiO[sub 2]/Si) substrates by a sol-gel technique, for the subsequent sol-gel deposition of (Pb, La)TiO[sub 3] thin films, under the assumption that the structural and compositional compatibility between ferroelectric films and bottom electrodes could lead to enhanced electrical properties of ferroelectric thin films. In this work, the LaNiO[sub 3] films served three functions: the first was used as bottom electrodes for the fabrication of integrated ferroelectric devices on Si due to their low resistivity; the second was used as a seeding layer, promoting perovskite phase formation due to their structural compatibility with ferroelectric films; and the third was to suppress the composition diffusion between ferroelectric films and bottom electrodes due to their composition compatibility. The experimental results demonstrated that (Pb, La)TiO[sub 3] films prepared on the LaNiO[sub 3]/SiO[sub 2]/Si substrates had excellent electrical properties. The dielectric constant and dielectric loss were 1468 and 0.033, respectively. The dielectric constant is rather high among the values reported for (Pb, La)TiO[sub 3] thin films. The remanent polarization and coercive field were 4.24 μC/cm2 and 23.2 kV/cm, respectively. © 2001 American Institute of Physics.
ACCESSION #
4715221

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics