Stress-induced leakage current in ultrathin SiO[sub 2] layers and the hydrogen dispersive transport model

Houssa, M.; Stesmans, A.; Carter, R. J.; Heyns, M. M.
May 2001
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3289
Academic Journal
The time dependence of the current density variation ΔJ(t) observed during constant gate voltage stress of metal-oxide-semiconductor capacitors with ultrathin gate oxide and oxynitride layers is investigated. The generation of bulk neutral defects in the SiO[sub 2] layer is calculated within a dispersive transport model, assuming that these defects are induced by the random hopping of H[sup +] ions in the gate oxide layer. It is shown that the stress-voltage and gate-oxide-thickness dependence of ΔJ(t) can be quite well explained by this dispersive hydrogen transport model. © 2001 American Institute of Physics.


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