Epitaxial growth of the first five members of the Sr[sub n+1]Ti[sub n]O[sub 3n+1] Ruddlesden-Popper homologous series

Haeni, J. H.; Theis, C. D.; Schlom, D. G.; Tian, W.; Pan, X. Q.; Chang, H.; Takeuchi, I.; Xiang, X.-D.
May 2001
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3292
Academic Journal
The first five members of the Sr[sub n+1]Ti[sub n]O[sub 3n+1] Ruddlesden-Popper homologous series, i.e., Sr[sub 2]TiO[sub 4], Sr[sub 3]Ti[sub 2]O[sub 7], Sr[sub 4]Ti[sub 3]O[sub 10], Sr[sub 5]Ti[sub 4]O[sub 13], and Sr[sub 6]Ti[sub 5]O[sub 16], have been grown by reactive molecular beam epitaxy. A combination of atomic absorption spectroscopy and reflection high-energy electron diffraction intensity oscillations were used for the strict composition control necessary for the synthesis of these phases. X-ray diffraction and high-resolution transmission electron microscope images confirm that these films are epitaxially oriented and nearly free of intergrowths. Dielectric measurements indicate that the dielectric constant tensor coefficient ε[sub 33] increases from a minimum of 44±4 in the n=1(Sr[sub 2]TiO[sub 4]) film to a maximum of 263±2 in the n=∞(SrTiO[sub 3]) film. © 2001 American Institute of Physics.


Related Articles

  • In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy. Toyoshima, H.; Niwa, T. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p821 

    Examines the indium surface segregation during the growth of indium gallium arsenide (InGaAs) by molecular beam epitaxy. Use of high-energy electron diffraction measurements to assess the segregation of indium atoms; Composition gradation at InAs/GaAs interface; Information on growth-mode...

  • Atomic absorption spectroscopy system for flux monitoring and atomic-layer control of molecular... Kasai, Yuji; Sakai, Shigeki // Review of Scientific Instruments;Jul97, Vol. 68 Issue 7, p2850 

    Details an atomic absorption spectroscopy system for accurate and in situ atomic-flux-monitoring during molecular beam epitaxial growth. Use of hollow cathode lamps as light sources; Measurement of the transmitted light intensities on both the presence and absence of atomic beam flux;...

  • In-situ stoichiometry determination using x-ray fluorescence generated by reflection-high-energy-electron-diffraction. Keenan, Cameron; Chandril, Sandeep; Myers, T. H.; Lederman, David // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p114305 

    A major challenge in the stoichiometric growth of complex oxide compounds is the control of the relative compositions of the constituent materials. A potential avenue for compositional analysis during growth is the use of x-ray fluorescence generated during reflection high energy electron...

  • In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system. Ohkouchi, Shunsuke; Nakamura, Yusui; Ikeda, Naoki; Sugimoto, Yoshimasa; Asakawa, Kiyoshi // Review of Scientific Instruments;Jul2007, Vol. 78 Issue 7, p073908 

    We have developed an in situ mask that enables the selective formation of molecular beam epitaxially grown layers in narrow regions. This mask can be fitted to a sample holder and removed in an ultrahigh-vacuum environment; thus, device structures can be fabricated without exposing the sample...

  • Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100). Tonkikh, A. A.; Cirlin, G. E.; Dubrovskii, V. G.; Ustinov, V. M.; Werner, P. // Semiconductors;Oct2004, Vol. 38 Issue 10, p1202 

    Morphological properties of Ge nanoscale island arrays formed on the Si(100) surface during molecular beam epitaxy are studied using reflection high-energy electron diffraction and atomic-force microscopy. It is shown that codeposition of Sb and Ge significantly increases the density of final...

  • High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source. Xing Gu; Izyumskaya, Natalia; Avrutin, Vitaly; Morkoç, Hadis; Tae Dong Kang; Hosun Lee // Applied Physics Letters;9/18/2006, Vol. 89 Issue 12, p122912 

    Single crystalline PbTiO3 films have been epitaxially grown on SrTiO3 (001) substrates by molecular beam epitaxy using H2O2 as the source of active oxygen. The optimum growth conditions have been determined by analyzing a range of growth parameters affecting growth and used to attain single...

  • Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1-xLaxCuO2 thin films. Maritato, L.; Galdi, A.; Orgiani, P.; Harter, J. W.; Schubert, J.; Shen, K. M.; Schlom, D. G. // Journal of Applied Physics;Feb2013, Vol. 113 Issue 5, p053911 

    Superconducting Sr1-xLaxCuO2 thin films have been grown on GdScO3 substrates by reflection high-energy electron diffraction calibrated layer-by-layer molecular-beam epitaxy. X-ray diffraction analysis has confirmed the infinite layer structure after an in situ vacuum annealing step. In situ...

  • Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity. Norga, G. J.; Marchiori, C.; Guiller, A.; Locquet, J. P.; Rossel, Ch.; Siegwart, H.; Caimi, D.; Fompeyrine, J.; Conard, T. // Applied Physics Letters;12/26/2005, Vol. 87 Issue 26, p262905 

    We use the reflection high-energy electron diffraction oscillation phase shift to monitor the stability of the Sr barrier, prepared by exposure of Si(100) to Sr at high temperatures, in situ during molecular beam epitaxy growth of (Ba,Sr)O on Si(100). Our results confirm that the deposition of...

  • Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs. Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261 

    This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics