Displacement currents and the real part of high-frequency conductance of the resonant-tunneling diode

Feiginov, Michael N.
May 2001
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3301
Academic Journal
I have shown that weak variation of the tunnel transparency of the collector barrier with bias has substantial (and frequently crucial) effect on the high-frequency properties of the resonant-tunneling diodes (RTDs). Also it has been shown that the real part of the RTD conductance can be negative and large at the frequencies much higher than the reciprocal quasibound-state lifetime in the quantum well between the barriers of RTD, if (as opposed to common practice) the RTD collector is heavily doped and does not have thick spacer layers. The displacement currents are responsible for the effects. A simple equivalent circuit of RTD is proposed, and it fairly well describes the published experimental data. © 2001 American Institute of Physics.


Related Articles

  • Equivalence between resonant tunneling and sequential tunneling in double-barrier diodes. Weil, T.; Vinter, B. // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1281 

    Resonant tunneling is known to lead to negative differential resistance in double-barrier diodes. Sequential tunneling has been proposed by S. Luryi [Appl. Phys. Lett. 47, 490 (1985)] as an alternative mechanism for the negative differential resistance observed. We show that the two...

  • Resonance-tunnel-transit diode with coherent tunneling as an oscillator in the submillimeter range. Gel�vich, �. A.; Golant, E. I.; Pashkovskii, A. B.; Sazonov, V. P. // Technical Physics Letters;May99, Vol. 25 Issue 5, p382 

    This paper presents an improved method for designing a resonance-tunnel-transit diode that makes it possible to substantially increase its negative dynamic resistance.

  • Excess Noise Peaks in Porous Silicon-Based Diode Structures. Demidov, E. S.; Demidova, N. E.; Karzanov, V. V.; Shabanov, V. N. // JETP Letters;6/10/2002, Vol. 75 Issue 11, p556 

    Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer formed on heavily boron-doped silicon single...

  • Improved design of AlAs/GaAs resonant tunneling diodes. Cheng, Peng; Harris, James S. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1676 

    We have investigated the effect of complex barrier structures in double-barrier resonant tunneling diodes (DBRTDs). The largest room-temperature peak-to-valley current ratios (PVCRs) to date have been observed for AlGaAs/GaAs DBRTDs. PVCRs as high as 5.1 were observed in AlAs/GaAs DBRTDs with an...

  • Electron-state lifetimes in submicron diameter resonant tunneling diodes. Tewordt, M.; Ritchie, D.A.; Syme, R.T.; Kelly, M.J.; Law, V.J.; Newbury, R.; Pepper, M.; Frost, J.E.F.; Jones, G.A.C.; Stobbs, W.M. // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p1966 

    Examines the electron-state lifetimes in submicron diameter resonant tunneling diodes. Investigation on the lifetimes of electron states in the quantum wells; Observation on the current-voltage characteristics; Explanation on the experimental lifetimes from transmission electron microscopy.

  • Diameter dependence of current-voltage characteristics of ultrasmall area AlSb-InAs resonant.... Nomoto, K.; Taira, K. // Applied Physics Letters;4/14/1997, Vol. 70 Issue 15, p2025 

    Investigates the current voltage characteristics of aluminum antimonide-indium arsenide resonant tunneling diodes (RTD). Diameters of diodes; Observation of resonant tunneling peaks at room temperature; Relation between peak-to-valley ratio and RTD diameter.

  • Lambda-X intervalley tunneling in InAs/AlSb resonant tunneling diodes. Carnahan, R.E.; Maldonado, M.A.; Martin, K.P.; Nogaret, A.; Higgins, R.J.; Cury, L.A.; Maude, D.K.; Portal, J.C.; Chen, J.F.; Cho, A.Y. // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1385 

    Investigates lambda-X intervalley tunneling in indium arsenide/aluminum antimonide resonant tunneling diodes at liquid helium temperatures. Application of molecular beam epitaxy; Calculation of the current-voltage curve; Analysis of tunneling resonances using a magnetic field.

  • Edge effects in a gated submicron resonant tunneling diode. Beton, P.H.; Dellow, M.W. // Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2508 

    Investigates the current-voltage characteristics of a gated submicron resonant tunneling diodes. Comparison of the peak-to-valley ratio of forward and reverse bias; Variation in the voltage drop across the emitter tunnel barrier; Factors attributed to the asymmetry and low peak-to-valley ratio...

  • Variable-area resonant tunneling diodes using implanted in-plane gates. Goodings, C. J.; Mizuta, H.; Cleaver, J. R. A.; Ahmed, H. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p1276 

    Reports on the fabrication of variable-area resonant tunneling diodes using a process in which the lateral confinement is produced by an in-plane implanted gate. Diagram of the devices used in the experiments; Layer structures of the materials used in the variable-area resonant tunneling diode...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics