Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors

Chen, Xiangdong; Ouyang, Qiqing; Jayanarayanan, Sankaran Kartik; Prins, Freek E.; Banerjee, Sanjay
May 2001
Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3334
Academic Journal
We have fabricated a vertical p-channel metal-oxide-semiconductor field-effect transistor called high-mobility heterojunction transistor (HMHJT). Compared with a Si control device, reduced short channel effects, reduced floating body effect, and high drive current have been achieved with this device structure. A SiGe/Si heterojunction barrier at the source/bulk junction suppresses drain induced barrier lowering and bulk punchthrough, which are significant problems for sub-100 nm devices. A SiGe source also helps to reduce the charge built-up in the floating body. The higher mobility in a strained SiGe channel and the absence of a hetero-barrier between the source and channel result in higher drive current. The fabricated HMHJT has a 60% higher drive current at V[sub DS]=V[sub GS]-V[sub T]=-1.6 V, and a 70x lower off-state leakage current at V[sub DS]=-1.6 V and V[sub GS]=0.0 V, compared with the Si control device. © 2001 American Institute of Physics.


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