TITLE

Monolithic-integrated two-wavelength laser diodes for digital-versatile-disk/compact-disk playback

AUTHOR(S)
Nemoto, Kazuhiko; Kamei, Takafumi; Abe, Hiroaki; Imanishi, Daisuke; Narui, Hironobu; Hirata, Shoji
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2270
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have developed a monolithic two-wavelength laser diode, which emits 650 and 780 nm wavelengths. This device, which has a separated-confinement-heterostructure multi-quantum-well active region and a gain-guiding tapered-stripe structure, is fabricated using only two steps of metal organic chemical vapor deposition. The operating currents at 5 mW are 57.0 and 61.5 mA for the 650 and 780 nm elements, respectively. The relative intensity noise of the 650 and 780 nm elements was below -130 dB/Hz up to 70 °C without high-frequency superposition circuits. © 2001 American Institute of Physics.
ACCESSION #
4715193

 

Related Articles

  • AlGaInP-based microcavity light-emitting diodes: Controlled on-water detuning and measurement of... Royo, P.; Stanley, R.P.; Houdre, R.; Llegems, M.; Moser, M.; Hovel, R.; Schweizer, H.P.; Gulden, K.H. // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4052 

    Features results on visible red top-emission AlGaInP-based microcavity light-emitting diodes grown by metal organic chemical vapor deposition. Emission characteristics dependence; Detuning between the quantum well emission and the cavity mode.

  • Mesa-size-dependent color contrast in flip-chip blue/green two-color InGaN/GaN multi-quantum-well micro-light-emitting diodes. Chen, Horng-Shyang; Yeh, Dong-Ming; Lu, Chih-Feng; Huang, Chi-Feng; Lu, Yen-Cheng; Chen, Cheng-Yen; Huang, Jian-Jang; Yang, C. C. // Applied Physics Letters;8/28/2006, Vol. 89 Issue 9, p093501 

    The authors fabricate blue/green two-wavelength, InGaN/GaN quantum-well (QW), flip-chip micro-light-emitting diodes (μ-LEDs) of different mesa sizes by stacking QWs of different indium contents. It is found that the blue/green contrast ratio of such a μ-LED increases with the mesa size....

  • Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition. Kim, Kwang-Choong; Schmidt, Mathew C.; Sato, Hitoshi; Wu, Feng; Fellows, Natalie; Jia, Zhongyuan; Saito, Makoto; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Fujito, Kenji // Applied Physics Letters;10/29/2007, Vol. 91 Issue 18, p181120 

    Nonpolar m-plane (1100) InGaN-based light emitting diodes (LEDs) grown on low-extended defect density bulk m-plane GaN substrates offer great potential for high performance devices due to the absence of polarization-related internal electric fields. To optimize the quantum...

  • Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate. Schulze, F.; Dadgar, A.; Bläsing, J.; Diez, A.; Krost, A. // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p121114 

    We present GaN-based light emitting diode structures on a Si(001) substrate. The 2.3 μm thick, crack-free layers were grown by metalorganic vapor phase epitaxy using a high-temperature AlN seed layer and 4° off-oriented substrates. This allows us to grow a flat, fully coalesced, and single...

  • Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates. Roberts, A. T.; Mohanta, A.; Everitt, H. O.; Leach, J. H.; Van Den Broeck, D.; Hosalli, A. M.; Paskova, T.; Bedair, S. M. // Applied Physics Letters;10/28/2013, Vol. 103 Issue 18, p181106 

    Low defect density asymmetric multiple quantum wells (MQWs) of InGaN/GaN grown on non-polar a-plane GaN substrates were investigated using time-integrated and time-resolved photoluminescence spectroscopy. Comparison of these spectra with the predicted emission energies reveals that these QWs may...

  • Correlation between carrier localization and efficiency droop in AlGaN epilayers. Mickevicˇius, J.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R. // Applied Physics Letters;7/1/2013, Vol. 103 Issue 1, p011906 

    Photoluminescence studies of carrier dynamics in AlGaN epilayers with different degrees of carrier localization and densities of nonradiative recombination centers show that the prevailing droop mechanism in AlGaN epilayers with strong carrier localization and comparatively high density of...

  • The Effect of Growth Conditions on The Optical and Structural Properties of InGaN/GaN MQW LED Structures Grown by MOCVD. ÇETİN, S. S.; SAĞLAM, S.; ÖZÇELİK, S.; ÖZBAY, E. // Gazi University Journal of Science;2014, Vol. 27 Issue 4, p1105 

    Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW...

  • Self-electro-optic effect device and modulation convertor with InGaAs/InP multiple quantum wells. Bar-Joseph, I.; Sucha, G.; Miller, D. A. B.; Chemla, D. S.; Miller, B. I.; Koren, U. // Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p51 

    We report the first observation of the self-electro-optic effect in InGaAs/InP multiple quantum wells, grown by organometallic vapor phase epitaxy. Clear bistability and switching are observed over a range of 40 nm around 1.61 μm with 20–30 V bias. We demonstrate the operation of a...

  • High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor... Chang, J.R.; Su, Y.K.; Lin, C.L.; Wu, K.M.; Lu, Y.T.; Jaw, D.H.; Shiao, H.P.; Lin, W. // Applied Physics Letters;6/6/1999, Vol. 74 Issue 23, p3495 

    Reports that unstrained Al[sub 0.66]In[sub 0.34]As[sub 0.85]Sb[sub 0.15]/In[sub 0.53]Ga[sub 0.47]As multiple quantum well structures have been grown by metalorganic vapor phase epitaxy. Low-temperature photoluminescence performed for the multiple quantum well structures; Comparison of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics