TITLE

Fabrication of arrays of two-dimensional micropatterns using microspheres as lenses for projection photolithography

AUTHOR(S)
Wu, Ming-Hsien; Whitesides, George M.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2273
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter demonstrates the use of an array of transparent microspheres in forming repetitive, micrometer-scale patterns in photoresist, starting from masks with centimeter-scale patterns. A transparent microsphere with diameter d>1.5 μm acts as a lens and reduces centimeter-scale images into micrometer-scale images on its image plane. A planar array of microspheres projects the image of an illuminated mask onto a corresponding array of micropatterns on their common image plane. We have prepared arrays of polystyrene microspheres (d=1.5-10 μm) embedded in a transparent membrane to generate repetitive patterns in photoresist, and have transferred the resulting patterns into metal films by liftoff. The optical system of this technique is related to that used in conventional projection photolithography, but differs in that the lens that accomplishes size reduction is positioned within 10 μm of the photoresist. The microspheres generate uniform patterns over an area of ∼2 cm[sup 2], using a mask with area ∼25x25 cm[sup 2] illuminated with a white light source. This method can generate submicron features either within a micropattern or between neighboring patterns. © 2001 American Institute of Physics.
ACCESSION #
4715192

 

Related Articles

  • The challenges in materials design for 157nm photoresists. Patterson, Kyle; Somervell, Mark; Willson, C. Grant // Solid State Technology;Mar2000, Vol. 43 Issue 3, p41 

    Part II. Deals with materials design used in the lithography of photoresists. Information on damaging ultraviolet lithographic technologies; Details on the efforts to develop 157nm lithography; Application of single-layer photoresist process for imaging at 157 nm; How to achieve solubility in...

  • Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure. Henderson, D.; White, J. C.; Craighead, H. G.; Adesida, I. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p900 

    An F[sub 2] excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm². Stencil...

  • Small angle x-ray scattering for sub-100 nm pattern characterization. Jones, Ronald L.; Tengjiao Hu; Lin, Eric K.; Wen-Li Wu; Kolb, Rainer; Casa, Diego M.; Bolton, Patrick J.; Barclay, George G. // Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p4059 

    Characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using small angle x-ray scattering. The transmission scattering geometry employed potentially enables high throughput measurements for future technology nodes of the semiconductor industry,...

  • Growth Of Patterned SWNTs From Catalysts Fabricated By Direct Photolithography. Shaoming Huang; Jie Liu // AIP Conference Proceedings;2003, Vol. 685 Issue 1, p103 

    A novel feasible method to pattern SWNTs with different resolutions on surface in large scale by direct photolithography has been demonstrated. It involves the direct photolithographical patterning of catalysts on substrate by incorporating catalyst precursor into photoresist and then growing...

  • ELECTRONIC CHEMICALS. Hunter, David // Chemical Week;1/9/2002, Vol. 164 Issue 2, p9 

    Reports on the first commercial photoresist for use with 157-nanometer photolithographic tools produced by Clariant. Technology used in the resist of Clariant; Materials used in the resist; Other groups developing fluoropolymer-based resists.

  • Contrast Enhancement in Image Transfer via Interaction of UV Radiation with Inorganic Photoresist Films. Kaliteevskaya, N. A.; Seısyan, R. P. // Semiconductors;Feb2001, Vol. 35 Issue 2, p226 

    Photochemical transformations occurring in thin films of inorganic photoresists under UV irradiation from an excimer laser are analyzed theoretically. It is shown that the optimization of the light intensity and irradiation dose can make the transition region between the exposed and unexposed...

  • Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography. Seo, Jungho; Cho, Hanchul; Lee, Ju-kyung; Lee, Jinyoung; Busnaina, Ahmed; Lee, HeaYeon // Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p033105 

    We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method...

  • Topcoat-free photoresists for 193nm immersion lithography. Sanders, Daniel P.; Sundberg, Linda K.; Sooriyakumaran, Ratnam; Allen, Robert D. // Microlithography World;Aug2007, Vol. 16 Issue 3, p8 

    The article details how to develop additive-based topcoat-free photoresists for 193nm immersion lithography. It notes that achieving the delicate balance between the hydrophobicity required for high water contact angles and the acidity required for topcoat removal in aqueous base developer has...

  • 193nm resist development. Mack, George; Bright, Jeffrey; Winter, Tom; Ueda, Kenichi; Consiglio, Steven // Solid State Technology;Oct2007, Vol. 50 Issue 10, p52 

    The article relates the evaluation results of a new Tokyo Electron Ltd. developer nozzle hardware and process on multiple 193nm photoresists that significantly decrease process time and chemical consumption. It was noted that with the new developed method, the total process can be reduced by up...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics