TITLE

Near-field photoreflectance spectroscopy of quantum well structures

AUTHOR(S)
Cho, Yong-Hoon; Kim, Dai-Sik; Jhe, Wonho
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2306
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present near-field photoreflectance (NPR) spectroscopic studies of GaAs/Al[sub 0.3]Ga[sub 0.7]As quantum well structures using a near-field scanning optical microscope with either an uncoated or a metal-coated tapered optical fiber probe. The NPR method provides advantages over conventional optical microscopic ones: (i) higher signal-to-noise ratio, (ii) lower temperature-sensitivity of the signal, and (iii) more information about higher electronic energy states. We also discuss the feasibility of a imaging with high resolution and contrast by using the NPR method. © 2001 American Institute of Physics.
ACCESSION #
4715180

 

Related Articles

  • Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer. KOZIC, ANTONI; SU�IEDELIS, ALGIRDAS; PETKUN, VALERIJ; CER�KUS, AURIMAS; SHTRIKMANN, HADAS; GRADAUSKAS, JONAS; KUNDROTAS, JURGIS; A�MONTAS, STEPONAS // Optica Applicata;2005, Vol. 35 Issue 3, p471 

    In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER...

  • Differential reflectance spectroscopy of InGaAs/GaAs and AlGaAs/GaAs quantum wells. Shwe, C.; Gal, M. // Applied Physics Letters;10/29/1990, Vol. 57 Issue 18, p1910 

    A differential reflectance (DR) technique has been used to study InGaAs/GaAs and AlGaAs/GaAs quantum wells. DR was measured on ‘‘as-grown’’ layers, relying solely on the spatial variation of the quantum well parameters for the differential reflectance signal. The DR...

  • In-plane optical anisotropy of GaAs/AlAs multiple quantum wells probed by microscopic reflectance difference spectroscopy. Koopmans, B.; Richards, B.; Santos, P.; Eberl, K.; Cardona, M. // Applied Physics Letters;8/5/1996, Vol. 69 Issue 6, p782 

    We present a technique, microscopic reflectance difference spectroscopy (μRDS), for the measurement of optical anisotropy with sub-micron resolution. The technique is applied to the determination of the in-plane anisotropy of GaAs/AlAs multiple quantum well structures in a phase resolved way,...

  • Photomodulated reflectance spectra of In[sub 0.2]Ga[sub 0.8]As/GaAs single quantum wells. Jiang, S.; Shen, S.C. // Applied Physics Letters;4/10/1995, Vol. 66 Issue 15, p1948 

    Examines the photomodulated reflectance spectra of indium gallium arsenide (InGaAs)/GaAs single quantum wells. Influence of cap layer thickness on lattice relaxation and optical property; Use of argon ion laser as the modulating beam; Transition of heavy-hole subbands to electron subbands.

  • Determination of the complex refractive index of individual quantum wells from distributed reflectance. Hickernell, Robert K.; Christensen, David H.; Pellegrino, Joseph G.; Wang, Jin; Leburton, Jean-Pierre // Journal of Applied Physics;3/15/1994, Vol. 75 Issue 6, p3056 

    Provides information on a study which measured the refractive index of individual quantum wells by reflectance spectroscopy. Sensitivity measurement in nonresonant structures; Information on the quantum well dispersive and absorptive effects on reflectance; Absorption for quantum wells of...

  • Stimulated emission of photoexcited GaAs/AlxGa1-xAs single quantum wells. Borenstain, S.; Fekete, D.; Vofsi, M.; Sarfaty, R.; Cohen, E.; Ron, Arza // Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p442 

    The optical gain of narrow, single quantum well GaAs/AlxGa1-xAs structures is measured by the variable illuminated stripe length method at low temperatures. Stimulated emission (SE) is observed only from the lowest states of the electron-hole plasma (EHP) excited in the well and from the...

  • Vacancy-enhanced intermixing in highly strained InGaAs/GaAs multiple quantum well photodetector. Lee, Alex S.W.; Li, E. Herbert // Journal of Applied Physics;9/15/1999, Vol. 86 Issue 6, p3402 

    Presents a study on the effect of impurity-free vacancy disordering techniques on the optical and electrical properties of the highly strained indium gallium arsenide/gallium arsenide quantum well infrared photodetector. Experimental procedure; Results and discussion; Conclusion.

  • Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Martini, S.; Quivy, A. A.; Tabata, A.; Leite, J. R. // Journal of Applied Physics;9/1/2001, Vol. 90 Issue 5 

    Photoluminescence experiments were performed as a function of temperature and excitation intensity in order to investigate the optical properties of In[sub 0.1]Ga[sub 0.9]As/GaAs quantum wells grown on vicinal GaAs(001) substrates with different miscut angles. The misorientation of the surface...

  • Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells. Pikhtin, A. N.; Komkov, O. S.; Bazarov, K. V. // Semiconductors;May2006, Vol. 40 Issue 5, p592 

    The effect of external electric field on interband optical transitions in single InxGa1 − x As/GaAs quantum wells is studied by electroreflectance spectroscopy. A procedure is suggested for separating the contribution of particular exciton transitions to the complicated modulation...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics