Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics

Parkhomovsky, A.; Dabiran, A. M.; Benjaminsson, B.; Cohen, P. I.
April 2001
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2315
Academic Journal
GaN grown by molecular-beam epitaxy on Ga-polar GaN templates prepared by metal organic chemical vapor deposition shows a variety of morphologies that depend on defects and growth conditions. We measured the mean terrace widths of hexagonal growth spirals or hillocks versus ammonia and Ga fluxes and substrate temperature. The measurements were compared to a near equilibrium model of the growth. The results indicate that under excess Ga growth conditions, Ga-polar GaN(0001) has a mean step-edge energy of 0.27 eV/Å. © 2001 American Institute of Physics.


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