Retardation of boron diffusion in silicon by defect engineering

Shao, Lin; Lu, Xinming; Wang, Xuemei; Rusakova, Irene; Liu, Jiarui; Chu, Wei-Kan
April 2001
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2321
Academic Journal
By judiciously placing vacancy and interstitial defects at different depths, we are able to enhance or retard boron diffusion. This opens up a new approach for the formation of shallow P[sup +]n junction in silicon. After preimplantation with 50 or 500 keV Si[sup +] ions to produce a surface vacancy-rich region, we studied the diffusion of deposited B on predamaged samples with annealing between 900 and 1010 °C. Boron diffusion retardation was observed in both implantation conditions after low temperature annealing with enhancement occurring in a 50 keV implanted sample at high temperature. Choosing high energy implantation to separate vacancies and interstitials can reduce the boron diffusion significantly. Such suppression became more obvious with higher implant doses. A junction less than 10 nm deep (at 1x10[sup 17] cm[sup -3] according to carrier concentration profiles) can be formed. © 2001 American Institute of Physics.


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