TITLE

Passivation of oxygen-related donors in microcrystalline silicon by low temperature deposition

AUTHOR(S)
Nasuno, Y.; Kondo, M.; Matsuda, A.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2330
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-temperature processing for high-performance solar cells based on hydrogenated microcrystalline silicon (μc-Si:H) has been developed using a conventional rf plasma-enhanced chemical vapor deposition (PECVD) technique at an excitation frequency of 13.56 MHz under a high deposition pressure condition. Among pin type solar cells, it is found that deposition temperature of i-layer at 140 °C is effective particularly for improving open circuit voltage (Voc), surprisingly without deteriorating short circuit current or fill factor. Carrier density of undoped μc-Si abruptly decreases for deposition temperatures lower than 180 °C, and the improvement of Voc is ascribed to a decrease of shunt leakage current arising from the oxygen-related donors. This implies that oxygen-related donors can be passivated at low deposition temperatures and that hydrogen plays an important role for the passivation. We propose a simple model for the hydrogen passivation of oxygen related donors. We apply this passivation technique to solar cells, and consequently a conversion efficiency of 8.9% (Voc=0.51 V, Jsc=25 mA/cm[sup -1], FF=0.70) has been obtained in spite of an oxygen concentration of 2x10[sup 19] cm[sup -3] in combination with device optimization such as a p-layer. Effect of deposition temperature of i-layer upon other solar cell parameter, short circuit current, and fill factor is also discussed. © 2001 American Institute of Physics.
ACCESSION #
4715171

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics