TITLE

Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition

AUTHOR(S)
Yan, M.; Lane, M.; Kannewurf, C. R.; Chang, R. P. H.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2342
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm[sup 2]/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films. © 2001 American Institute of Physics.
ACCESSION #
4715167

 

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