Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition

Yan, M.; Lane, M.; Kannewurf, C. R.; Chang, R. P. H.
April 2001
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2342
Academic Journal
Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm[sup 2]/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films. © 2001 American Institute of Physics.


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