TITLE

Surface morphology evolution in highly mismatched Sb-graded buffer layers on GaAs

AUTHOR(S)
Chen, Eric B.; Paine, David C.; Uppal, Parvez N.; Nichols, Kirby; Ahearn, John S.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2345
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ternary GaAs[sub 1-y]Sb[sub y] and quaternary Al[sub 0.5]Ga[sub 0.5]As[sub 1-y]Sb[sub y] compositionally step-graded buffer structures graded to a 4.6% mismatch on GaAs were evaluated by transmission electron microscopy. Cross-sectional bright field imaging (g=004) revealed the presence of compositional modulations parallel to the (001) interface with a period of 1-2 nm that were used to establish the morphology of the growth surface during buffer layer deposition. Analysis of the Sb-graded ternary structures shows that the growth surface remained planar with a maximum peak-to-valley height of 4.4±0.6 nm located near the topmost layer. A threading dislocation density of 10[sup 8]-10[sup 9] cm[sup -2] was measured in both types of buffer layers and an improvement in peak-to-valley amplitude (2.3±0.5 nm vs 4.4±0.6 nm) was observed in the Al-containing quaternary alloys. © 2001 American Institute of Physics.
ACCESSION #
4715166

 

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