Effect of microstructures on the microwave dielectric properties of ZrTiO[sub 4] thin films

Kim, Yongjo; Oh, Jeongmin; Kim, Tae-Gon; Park, Byungwoo
April 2001
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2363
Academic Journal
To obtain various paraelectric ZrTiO[sub 4] thin-film microstructures, the films were synthesized at different deposition temperatures using rf magnetron sputtering. Both the dielectric losses (tan δ) and dielectric constants (ε) of the ZrTiO[sub 4] thin films were measured up to 6 GHz using a circular-patch capacitor geometry. The films showed enhanced crystallinity with increasing deposition temperature, as determined from the x-ray diffraction peak widths at various scattering vectors. The microwave dielectric losses correlated very well with the level of crystallinity or strain, while the dielectric constants did not alter significantly. © 2001 American Institute of Physics.


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