TITLE

Excellent electric properties of free-standing InAs membranes

AUTHOR(S)
Yamaguchi, Hiroshi; Dreyfus, Remi; Hirayama, Yoshiro; Miyashita, Sen
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2372
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We fabricated semiconducting free-standing-beam and Hall-bar structures with a high slenderness ratio, a minimum thickness of 50 nm, and a typical length of several tens of microns using InAs membranes processed from InAs/GaAs heterostructures. These structures showed clear electric conductivity without any intentional doping. We obtained the carrier concentration and mobility by means of standard Hall measurements, thus confirming that both parameters were much larger than those of as-grown heterostructure samples. These results indicate that this material system is promising for micro/nanoelectromechanical system applications. © 2001 American Institute of Physics.
ACCESSION #
4715154

 

Related Articles

  • Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3�m. Imenkov, A. N.; Kolchanova, N. M.; Kubat, P.; Moiseev, K. D.; Civis, C.; Yakovlev, Yu. P. // Semiconductors;Mar2001, Vol. 35 Issue 3, p360 

    Current-tunable diode lasers with narrow emission lines for laser spectroscopy in the 3.2-3.4 �m wavelength range are developed. The lasers, based on an InAsSb/InAsSbP double heterostructure, have a widestripe cavity. The wave number increases from 3030 to 3034 cm[sup -1] as the current is...

  • Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers. Livshits, D. A.; Egorov, A. Yu.; Kochnev, I. V.; Kapitonov, V. A.; Lantratov, V. M.; Ledentsov, N. N.; Nalyot, T. A.; Tarasov, I. S. // Semiconductors;Mar2001, Vol. 35 Issue 3, p365 

    Continuous-wave output powers of 9.2 W at a constant heatsink temperature of 10�C and 12.2 W at a stabilized temperature of the active region have been obtained on an InGaAs/AlGaAs laser with a 0.4-�mthick waveguide, operating at 1.03 �m. Record-breaking output mirror power...

  • Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs. Soshnikov, I. P.; Gorbenko, O. M.; Golubok, A. O.; Ledentsov, N. N. // Semiconductors;Mar2001, Vol. 35 Issue 3, p347 

    A program package is presented, ensuring fast direct and inverse Fourier transformations of images, various methods of noise filtration and use of spectral windows, and determination of local interplanar spacings (LIS) from cross-sectional high-resolution electron micrographs. The algorithm for...

  • Negative Luminescence in p-InAsSbP/n-InAs Diodes. Aidaraliev, M.; Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus�, N. M.; Talalakin, G. N. // Semiconductors;Mar2001, Vol. 35 Issue 3, p321 

    Negative luminescence (NL) at ?[sub max] = 3.8 �m from reverse-biased p-InAsSbP/n-InAs diode hetero-structures has been studied at temperatures of 70-180�C. The NL power increases with temperature and exceeds the power of direct-bias electroluminescence at temperatures over 110�C....

  • Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors. Gopinath, Juliet T.; Thoen, Erik R.; Koontz, Elisabeth M.; Grein, Matthew E.; Kolodziejski, Leslie A.; Ippen, Erich P.; Donnelly, Joseph P. // Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3409 

    Reduction of device response time, resulting from the proton bombardment of InGaAs/InP-based semiconductor saturable absorbers, was studied experimentally using an ultrafast degenerate, cross- polarized pump-probe technique. Proton bombardment is shown to reduce device response times to ∼1...

  • Effects of ordering and alloy phase separation on the optical emission characteristics of In[sub 1-x]Ga[sub x]As[sub y]P[sub 1-y] layers grown on GaAs substrates. Bernussi, A. A.; Carvalho, W.; Dias Franco, Margareth K. K. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4898 

    We investigated the optical emission characteristics of low- and high-arsenic content In[sub 1-x]Ga[sub x]As[sub y]P[sub 1-y] alloys grown on exact-oriented (100) GaAs substrates. Clear evidence of a spontaneously ordering superlattice, even in high-arsenic content quaternary samples, was...

  • Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction. Lee, Ching-Ting; Yu, Qing-Xuan; Tang, Bang-Tai; Lee, Hsin-Ying; Hwang, Fu-Tsai // Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3412 

    The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500 °C, in hydrogen ambient. The measured specific contact resistance was 3x10[sup -4] Ω cm2. Ohmic formation...

  • Dark pulse formation in a quantum-dot laser. Zimmermann, J.; Cundiff, S. T.; von Plessen, G.; Feldmann, J.; Arzberger, M.; Bo¨hm, G.; Amann, M.-C.; Abstreiter, G. // Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p18 

    The laser emission of an InAs/GaAs quantum-dot laser after injection of a nonresonant optical pulse is time resolved using femtosecond upconversion. The injected pulse burns a hole into the gain spectrum that leads to an ultrafast redistribution of carriers away from the lasing wavelength,...

  • Moss-Burstein and plasma reflection characteristics of heavily doped n-type In...Ga...As and... Charache, G. W.; Holden, T. // Journal of Applied Physics;7/1/1999, Vol. 86 Issue 1, p452 

    Presents information on a study which examined the electrical and optical properties of degenerately doped n-type indium-gallium arsenide and indium phosphorous arsenide using Moss-Burstein and plasma reflection technique. Experimental method; Results and discussion; Conclusions.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics