Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

Hernando, J.; Sánchez-Rojas, J. L.; Guzmán, A.; Mun˜oz, E.; Tijero, J. M. G.; González, D.; Aragón, G.; García, R.
April 2001
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2390
Academic Journal
Longwavelength InGaAs/GaAs quantum-well infrared photodetectors with indium contents ranging from 25% to 40% have been grown and characterized. Material quality has been assessed by photoluminescence and transmission electron microscopy. Intersubband photocurrent, excited by polarized (TE or TM) infrared light, has been analyzed in order to determine the responsivity for normal-incident radiation. It is found that the TE to TM responsivity ratio is lower than 10% in all the samples studied. By changing the indium content from 25% to 40%, the increase in the TE to TM photoresponse ratio is as low as 3%. Our results are opposite to previous reports of experimental observation of significant TE-polarized light absorption. However, the low efficiency for normal-incident radiation agrees with various theoretical predictions. © 2001 American Institute of Physics.


Related Articles

  • Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells. Peng, L.-H.; Shih, C.-W.; Lai, C.-M.; Chuo, C.-C.; Chyi, J.-I. // Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4268 

    We report the use of selective wavelength excitation to examine the surface band-bending effects on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). Under a 355-nm excitation, the In[SUB0.18]Ga[SUB0.82]N well emission exhibits a linear...

  • Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm. Yablonskii, G. P.; Lutsenko, E. V.; Pavlovskii, V. N.; Marko, I. P.; Gurskii, A. L.; Zubialevich, V. Z.; Mudryi, A. V.; Scho¨n, O.; Protzmann, H.; Lu¨nenbu¨rger, M.; Schineller, B.; Heuken, M.; Kalisch, H.; Heime, K. // Applied Physics Letters;9/24/2001, Vol. 79 Issue 13 

    Optically pumped lasing in the wavelength range of 450–470 nm in InGaN/GaN multiple-quantum-well heterostructures grown by metalorganic vapor phase epitaxy was achieved and investigated. The energy and power per pulse of the laser were 80 nJ and 10 W correspondingly for one facet at room...

  • Resonant excitation photoluminescence studies of InGaN/GaN single quantum well structures. Graham, D. M.; Dawson, P.; Godfrey, M. J.; Kappers, M. J.; Humphreys, C. J. // Applied Physics Letters;11/20/2006, Vol. 89 Issue 21, p211901 

    The optical properties of InGaN/GaN quantum well structures, with indium fractions of 0.15 and 0.25, have been studied under resonant excitation conditions. The low-temperature (T=6 K) photoluminescence spectra revealed a broad recombination peak that the authors have attributed to the...

  • Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices. Mamutin, V. V.; Bondarenko, O. V.; Vasil'ev, A. P.; Gladyshev, A. G.; Egorov, A. Yu.; Kryzhanovskaya, N. V.; Mikhrin, V. S.; Ustinov, V. M. // Technical Physics Letters;May2007, Vol. 33 Issue 5, p384 

    The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied. It is demonstrated that, using such superlattices of various design and thickness and with additional InAs monolayer spacers, it is possible to...

  • The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior. Tsung-Jui Yang; Shivaraman, Ravi; Speck, James S.; Yuh-Renn Wu // Journal of Applied Physics;2014, Vol. 116 Issue 11, p113104-1 

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations...

  • Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm. Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. // Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4038 

    Extremely low threshold-current-density In[SUB0.4]Ga[SUB0.6]As quantum-well (QW) lasers have been realized in the 1215-1233 nm wavelength regime. The measured room-temperature threshold current density of the InGaAs QW lasers with a cavity length of 1000 mm is only 90 A/cm[SUP2] at an emission...

  • Correlation between the exciton mobility and the excitonic linewidth in shallow.... Bracher, G.; Schweizer, H. // Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p702 

    Investigates exciton scattering using time-resolved photoluminescence spectroscopy with high spatial and temporal resolution. Details on the growth procedure and given sample characteristics; Applicability of an optical time-of-flight method in the study of excitonic transport; Correlation...

  • Elimination of light scattering from grating irregularities by using a quantum well grating in.... Chu, S.N.G.; Tsang, W.T. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1886 

    Focuses on the elimination of light scattering from grating irregularities by using a quantum well grating in index or gain-coupled distributed feedback (DFB) lasers. Source for single mode optical fiber communication systems; Characteristics of the optical quality of the active materials;...

  • Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures. Walter, G.; Holonyak, N.; Ryou, J. H.; Dupuis, R. D. // Applied Physics Letters;9/24/2001, Vol. 79 Issue 13 

    Data are presented demonstrating continuous 300 K photopumped InP quantum dot (QD) laser operation (656–679 nm) realized by modifying and coupling, via tunneling, an auxiliary InGaP quantum well (QW) to the QDs of an InP–In(AlGa)P–InAlP heterostructure grown by metalorganic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics