TITLE

Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

AUTHOR(S)
Hernando, J.; Sánchez-Rojas, J. L.; Guzmán, A.; Mun˜oz, E.; Tijero, J. M. G.; González, D.; Aragón, G.; García, R.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2390
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Longwavelength InGaAs/GaAs quantum-well infrared photodetectors with indium contents ranging from 25% to 40% have been grown and characterized. Material quality has been assessed by photoluminescence and transmission electron microscopy. Intersubband photocurrent, excited by polarized (TE or TM) infrared light, has been analyzed in order to determine the responsivity for normal-incident radiation. It is found that the TE to TM responsivity ratio is lower than 10% in all the samples studied. By changing the indium content from 25% to 40%, the increase in the TE to TM photoresponse ratio is as low as 3%. Our results are opposite to previous reports of experimental observation of significant TE-polarized light absorption. However, the low efficiency for normal-incident radiation agrees with various theoretical predictions. © 2001 American Institute of Physics.
ACCESSION #
4715148

 

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