TITLE

Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer

AUTHOR(S)
Dubon, O. D.; Evans, P. G.; Chervinsky, J. F.; Aziz, M. J.; Spaepen, F.; Golovchenko, J. A.; Chisholm, M. F.; Muller, D. A.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface. We demonstrate that the suppression of dopant segregation at the lower temperatures attainable by Pb-mediated growth allows the incorporation of As donors at concentrations reaching a few atomic percent. When Pb and Si are deposited on an As-terminated Si(111) substrate at 350 °C, the Pb segregates to the surface without doping the Si film while the As is buried within nanometers of the substrate-film interface. The resulting concentration of electrically active As, 1.8x10[sup 21] cm[sup -3], represents the highest concentration of As donors achieved by any delta-doping or thin-film deposition method. © 2001 American Institute of Physics.
ACCESSION #
4715126

 

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