Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer

Nahhas, Ahmed; Kim, Hong Koo; Blachere, Jean
March 2001
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1511
Academic Journal
We report on epitaxial growth of ZnO films on Si(111) substrates using an epitaxial GaN buffer layer. A rf magnetron sputtering process has been developed and utilized in growing epitaxial GaN buffers on Si, and then ZnO films on the GaN-buffered Si substrates. X-ray diffraction analysis shows that both the ZnO and GaN films are of a monocrystalline wurtzite structure with an epitaxial relationship of ZnO[0001]//GaN[0001]//Si[111] along the growth direction and ZnO[112_01]//GaN[112_0]//Si[11_0] along the in-plane direction. The successful growth of epitaxial ZnO/GaN films on Si demonstrates the feasibility and promise of integrating various functional devices on the same substrate. © 2001 American Institute of Physics.


Related Articles

  • High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction. Longxing Su; Quanlin Zhang; Tianzhun Wu; Mingming Chen; Yuquan Su; Yuan Zhu; Rong Xiang; Xuchun Gui; Zikang Tang // Applied Physics Letters;8/18/2014, Vol. 105 Issue 7, p1 

    Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrateby metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively.X-ray diffraction and photoluminescence investigations revealed the high crystal quality of thebilayer...

  • Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers. Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi; Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p081915 

    The authors have grown nonpolar AlN layers on m-plane ZnO substrates using pulsed laser deposition and investigated their structural properties. The direct growth of AlN on ZnO substrates at 750 °C results in the formation of polycrystalline materials due to significant interfacial reactions...

  • Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition. Dai, J.; Han, X.; Wu, Z.; Fang, Y.; Xiong, H.; Tian, Y.; Yu, C.; He, Q.; Chen, C. // Journal of Electronic Materials;Apr2011, Vol. 40 Issue 4, p446 

    In this work, a-plane GaN/ r-sapphire templates have been used to grow nonpolar a-plane ZnO films by pulsed laser deposition. The ZnO film growth temperature was varied in the range of 400°C to 600°C, and the effect of growth temperature on the properties of the ZnO thin films was...

  • Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers. Özgür, Ü.; Fu, Y.; Moon, Y. T.; Yun, F.; Morkoç, H.; Everitt, H. O. // Journal of Applied Physics;5/15/2005, Vol. 97 Issue 10, p10P106 

    Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on SiN and TiN porous network templates. The room-temperature decay times obtained from biexponential fits to time-resolved photoluminescence data are increased...

  • Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiN interlayer. Song, Shiwei; Liu, Yang; Liang, Hongwei; Yang, Dechao; Zhang, Kexiong; Xia, Xiaochuan; Shen, Rensheng; Du, Guotong // Journal of Materials Science: Materials in Electronics;Aug2013, Vol. 24 Issue 8, p2923 

    Improved structural quality and tensile stress releasing were realized in GaN thin films grown on 6H-SiC by metal organic chemical vapor deposition using an in situ porous SiN interlayer. The SiN was formed in situ in the growth chamber by simultaneous flow of diluted silane and ammonia, leading...

  • Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy. Haskell, B.A.; Wu, F.; Matsuda, S.; Craven, M.D.; Fini, P.T.; DenBaars, S.P.; Speck, J.S.; Shuji Nakamura, J.S. // Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1554 

    This letter discusses the structural and morphological characteristics of planar, nonpolar (1120) a-plane GaN films grown on (1102) r-plane sapphire by hydride vapor phase epitaxy. Specular films with thicknesses over 50 μm were grown, eliminating the severely faceted surfaces that have...

  • Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction. Kuchuk, A. V.; Stanchu, H. V.; Chen Li; Ware, M. E.; Mazur, Yu. I.; Kladko, V. P.; Belyaev, A. E.; Salamo, G. J. // Journal of Applied Physics;2014, Vol. 116 Issue 22, p224302-1 

    Here, we demonstrate X-ray fitting through kinematical simulations of the intensity profiles of symmetric reflections for epitaxial compositionally graded layers of AlGaN grown by molecular beam epitaxy pseudomorphically on [0001]-oriented GaN substrates. These detailed simulations depict...

  • GaN grown on hydrogen plasma cleaned 6H-SiC substrates. Lin, M.E.; Strite, S.; Agarwal, A.; Salvador, A.; Zhou, G.L.; Teraguchi, N.; Rockett, A.; Morkoc, H. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p702 

    Reports the epitaxial gallium nitride (GaN) layers grown on 6H-silicon carbide (SiC) (0001) substrates. Techniques for the preparation of SiC substrate; Growth of high quality GaN on SiC substrates; Purpose of using the x-ray diffractometry.

  • GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces. Xing Gu, M.; Reshchikov, Michael A.; Teke, Ali; Johnstone, Daniel; Morkoç, Hadis; Nemeth, Bill; Nause, Jeff // Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2268 

    ZnO is considered as a promising substrate for GaN epitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxial growth in general and GaN in particular. In this work, ZnO substrates with atomically...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics