TITLE

Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer

AUTHOR(S)
Nahhas, Ahmed; Kim, Hong Koo; Blachere, Jean
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1511
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on epitaxial growth of ZnO films on Si(111) substrates using an epitaxial GaN buffer layer. A rf magnetron sputtering process has been developed and utilized in growing epitaxial GaN buffers on Si, and then ZnO films on the GaN-buffered Si substrates. X-ray diffraction analysis shows that both the ZnO and GaN films are of a monocrystalline wurtzite structure with an epitaxial relationship of ZnO[0001]//GaN[0001]//Si[111] along the growth direction and ZnO[112_01]//GaN[112_0]//Si[11_0] along the in-plane direction. The successful growth of epitaxial ZnO/GaN films on Si demonstrates the feasibility and promise of integrating various functional devices on the same substrate. © 2001 American Institute of Physics.
ACCESSION #
4715123

 

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