Study of ultrathin Al[sub 2]O[sub 3]/Si(001) interfaces by using scanning reflection electron microscopy and x-ray photoelectron spectroscopy

Kundu, Manisha; Miyata, Noriyuki; Ichikawa, Masakazu
March 2001
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1517
Academic Journal
Al[sub 2]O[sub 3]/Si(001) interfaces were investigated using scanning reflection electron microscopy and x-ray photoelectron spectroscopy. A uniform and stoichiometric ultrathin Al[sub 2]O[sub 3] film of ∼0.6 nm was grown on an atomically flat Si(001)-2x1 surface, and the resulting Al[sub 2]O[sub 3]/Si(001) interface was atomically abrupt. Furthermore, an intentional high-pressure oxidation shows that we can grow Si oxide at the Al[sub 2]O[sub 3]/Si(001) interface with atomic-scale uniformity as this oxidation proceeds in a layer-by-layer manner. The resulting Si oxide/Si(001) interface was also atomically abrupt. In addition, the rate of oxidation of Si at the Al[sub 2]O[sub 3]/Si(001) interface depends strongly on the O[sub 2] pressure. © 2001 American Institute of Physics.


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