Atomic resolution structure of growth and etching patterns at the surface of microwave plasma chemical vapor deposited diamond films

Lukins, P. B.; Zareie, M. H.; Khachan, J.
March 2001
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1520
Academic Journal
Scanning tunneling microscopy and spectroscopy of microwave chemical vapor deposited diamond films prepared using a methane/hydrogen gas mixture indicates that the predominant diamond surface structure is (001) 1x1: 2H with a wide variety of facet shapes and orientations, and that the film surface is diamond-like and semiconductive but with a surface band gap (∼1.1 eV) that is smaller than the band gap of normal bulk diamond. Significant differences are observed in the electronic properties, resolution, and contrast between newly deposited surface carbon atoms and those bound in the underlying lattice. The composition of the deposition gas mixture is important in determining both the crystal structure and the type of bond termination at the surface. © 2001 American Institute of Physics.


Related Articles

  • Scanning tunneling microscopy on chemical vapor deposited diamond films. Busmann, H.-G.; Sprang, H.; Hertel, I.V.; Zimmermann-Edling, W.; Guntherodt, H.-J. // Applied Physics Letters;7/15/1991, Vol. 59 Issue 3, p295 

    Examines chemical vapor deposited diamond films by scanning tunneling microscopy. Preparation of films in a hot-filament reactor; Characterization of the diamond film surface; Use of a pulsed high pressure valve in feeding the gas into the reactor.

  • Evidence for layered growth of (100) textured diamond films. Godbole, V.P.; Sumant, A.V. // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2626 

    Investigates the synthesis of diamond films by hot filament chemical vapor deposition. Application of scanning tunneling microscopy; Characteristics of the diamond crystallites; Significance of the value of the scaling exponent.

  • A new experimental setup for in situ characterization of diamond deposition by scanning tunneling microscopy. Ackermann, L.; Kulisch, W. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS45 

    Abstract. A combined HFCVD/in situ STM setup is presented that allows the performance of in situ scanning tunneling microscopy measurements during hot-filament chemical vapour deposition of diamond thin films despite the adverse conditions required for diamond growth. Both parts of the setup,...

  • Surface structure of homoepitaxial diamond (001) films, a scanning tunneling microscopy study. Yalei Kuang; Yafei Wang // Applied Physics Letters;12/18/1995, Vol. 67 Issue 25, p3721 

    Examines the surface structures of homoepitaxial diamond (001) thin film using scanning tunneling microscopy. Deposition of boron-doped film on the diamond substrate by chemical vapor deposition; Display of dimer-type reconstruction and double-layer steps parallel to dimer rows; Observation of...

  • Room-temperature observation of high-spin polarization of epitaxial CrO[sub 2](100) island films at the Fermi energy. Dedkov, Yu. S.; Fonine, M.; Ko¨nig, C.; Ru¨diger, U.; Gu¨ntherodt, G.; Senz, S.; Hesse, D. // Applied Physics Letters;6/3/2002, Vol. 80 Issue 22, p4181 

    Epitaxial CrO[sub 2](100) island films have been grown on TiO[sub 2](100) substrates by a chemical-vapor deposition technique. Well-controlled surface and interface properties of the CrO[sub 2](100) films were confirmed by scanning tunneling microscopy and transmission electron microscopy,...

  • Atomic structure of steps and defects on the clean diamond (100)-2×1 surface studied using ultrahigh vacuum scanning tunneling microscopy. Stallcup, R. E.; Perez, J. M. // Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4538 

    We report ultrahigh vacuum scanning tunneling microscopy studies of the clean nonhydrogen-terminated diamond (100)-2 × 1 surface showing single- and double-layer steps that are rebonded. The main defects observed are single, multiple, and row dimer vacancies, and antiphase boundaries....

  • Local atomic structure of ultra-thin Fe films grown on Cu(100). Biedermann, A.; Tschelieliessnig, R.; Schmid, M.; Varga, P. // Applied Physics A: Materials Science & Processing;2004, Vol. 78 Issue 6, p807 

    Ultra-thin epitaxial Fe films grown by thermal deposition on Cu(100) are analyzed by scanning tunneling microscopy. Evidence is presented that the morphological characteristics and magnetic properties are a direct consequence of FCC-to-BCC transitions reminiscent of those occurring in bulk Fe....

  • Selective area growth of metal nanostructures. Adams, D.P.; Mayer, T.M. // Applied Physics Letters;4/15/1996, Vol. 68 Issue 16, p2210 

    Examines the selective area growth of metal nanostructures. Fabrication of nanometer-scale metal lines onto silicon(100) substrate by scanning tunneling microscope (STM) based lithography and chemical vapor deposition; Use of STM tip to define areas for metal layer growth; Exposure of...

  • Si(100) surfaces in a hydrogen-based process ambient. Döscher, Henning; Dobrich, Anja; Brückner, Sebastian; Kleinschmidt, Peter; Hannappel, Thomas // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p151905 

    We studied the atomic surface properties of Si(100) during preparation in a (metal-organic) vapor phase epitaxy (VPE) reactor and the impact of the hydrogen ambient. Absorption lines in Fourier-transform infrared spectra were identified as stretch modes of coupled Si-H monohydrides, in agreement...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics