Strain and composition dependence of the E[sub 1](TO) mode in hexagonal Al[sub 1-x]In[sub x]N thin films

Kasic, A.; Schubert, M.; Off, J.; Scholz, F.
March 2001
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1526
Academic Journal
Infrared spectroscopic ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E[sub 1] symmetry in hexagonal Al[sub 1-x]In[sub x]N films for 0.12≤x≤0.21. The 0.1-0.2-μm thick films were grown on slightly compressively strained hexagonal GaN buffer layers, or directly on [0001] sapphire by metalorganic vapor phase epitaxy. The Al[sub 1-x]In[sub x]N E[sub 1](TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, C. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al[sub 1-x]In[sub x]N deposited directly on sapphire possesses phonon modes which indicate fully relaxed film growth. © 2001 American Institute of Physics.


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