TITLE

V-shaped defects connected to inversion domains in AlGaN layers

AUTHOR(S)
Pécz, B.; Makkai, Zs.; di Forte-Poisson, M. A.; Huet, F.; Dunin-Borkowski, R. E.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1529
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thick AlGaN layers and AlGaN/GaN superlattices have been grown on GaN using metalorganic chemical vapor deposition. Cross-sectional transmission electron microscopy has been used to show that V-shaped surface pits on these samples differ from similar features observed in the InGaN system. Inversion domains and segregated Al are found in the middle of each V pit, and superlattice layers are observed to follow the pit sidewalls. © 2001 American Institute of Physics.
ACCESSION #
4715117

 

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