TITLE

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

AUTHOR(S)
Lefebvre, P.; Taliercio, T.; Morel, A.; Allegre, J.; Gallart, M.; Gil, B.; Mathieu, H.; Damilano, B.; Grandjean, N.; Massies, J.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1538
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8
ACCESSION #
4715114

 

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