TITLE

Photovoltaic effects on pinch-off voltage and open-circuit voltage in high-electron-mobility-transistor and Schottky-diode configurations

AUTHOR(S)
Kim, D. M.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1553
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photovoltaic effects on the pinch-off voltage (V[sub P]) in the high-electron-mobility-transistor (HEMT) and the open-circuit photovoltage (V[sub opt,OC]) in the Schottky-diode configurations are characterized as a function of the optical input (P[sub opt]). The open-circuit photovoltage (V[sub opt,OC]) in a Schottky-diode configuration, which has only a vertical field and every photogenerated excess minority carrier contributes to the photovoltage, can be described by V[sub opt,OC]=nV[sub th] ln(P[sub opt]/P[sub ref]). However, the photovoltage (V[sub opt,FET]≡|V[sub P]-V[sub PO]|) in HEMT configuration, which has a lateral field as well as a vertical field to drift excess minority carriers to the source contact and results in reduced photovoltage development, can be modeled as V[sub opt,FET]=V[sub 0](P[sub opt]/P[sub refo])[sup γ]. © 2001 American Institute of Physics.
ACCESSION #
4715109

 

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