Photoluminescence modulation by high-frequency lateral electric fields in quantum wells

Zhang, S. K.; Santos, P. V.; Hey, R.
March 2001
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1559
Academic Journal
We investigate the modulation of the excitonic photoluminescence (PL) of GaAs quantum wells by high-frequency (f[sub rf]) lateral electric fields. Under these fields, the PL becomes modulated in the form of pulses with repetition frequency of 2 f[sub rf]. The periodic PL modulation is attributed to the time-dependent ionization of photogenerated excitons under the lateral electric field. The exciton ionization mechanism is proposed to be the impact ionization with electrons accelerated by the electric fields with a threshold field for ionization of about 15 V/cm. The different transport properties of electrons and holes are found to play a role in the exciton ionization process. © 2001 American Institute of Physics.


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