TITLE

On the origin of carrier localization in Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs quantum wells

AUTHOR(S)
Pinault, M.-A.; Tournié, E.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1562
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated by temperature-dependent photoluminescence (PL) spectroscopy as-grown GaInNAs, InGaAs, and GaAsN quantum wells (QWs) embedded in a GaAs matrix. The evolution of the PL peak position and of the PL linewidth shows evidence of a strong carrier localization for the GaInNAs QWs only. The high delocalization temperature, in the 150 K range, indicates the presence of a high density of possibly deep-localizing potential wells. In addition, a higher density of nonradiative recombination centers appears to result in stronger carrier localization. Transmission electron microscopy reveals well defined, flat interfaces, in these comparatively high N-content (y[sub N]∼0.04-0.05) QWs. Our results thus demonstrate that the origin of localization in GaInNAs QWs is the concomitant presence of both In and N, which may result in strain and/or composition fluctuations. © 2001 American Institute of Physics.
ACCESSION #
4715105

 

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