Hydrogen passivation and activation of oxygen complexes in silicon

Rashkeev, S. N.; Di Ventra, M.; Pantelides, S. T.
March 2001
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1571
Academic Journal
We report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a hydrogen atom in the core structure of thermal donors can account for the NL10 electron-paramagnetic-resonance signal. The interaction of H with the thermal-donor-like defects at the Si-SiO[sub 2] is also discussed. © 2001 American Institute of Physics.


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