TITLE

Hydrogen passivation and activation of oxygen complexes in silicon

AUTHOR(S)
Rashkeev, S. N.; Di Ventra, M.; Pantelides, S. T.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1571
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a hydrogen atom in the core structure of thermal donors can account for the NL10 electron-paramagnetic-resonance signal. The interaction of H with the thermal-donor-like defects at the Si-SiO[sub 2] is also discussed. © 2001 American Institute of Physics.
ACCESSION #
4715102

 

Related Articles

  • Early Stages of Oxygen Precipitation in Silicon: The Effect of Hydrogen. Markevich, V. P.; Murin, L. I.; Lindstr�m, J. L.; Suezawa, M. // Semiconductors;Sep2000, Vol. 34 Issue 9, p998 

    The formation of small oxygen clusters upon heat treatment at 280-375�C was studied in crystalline silicon doped with hydrogen by high-temperature in-diffusion. The presence of hydrogen in concentrations of 10[sup 15]-10[sup 16] cm[sup -3] significantly enhances (by up to a factor of 10[sup...

  • Hydrogen-oxygen interaction in silicon at around 50 ...C. Markevich, V.P.; Suezawa, M. // Journal of Applied Physics;3/15/1998, Vol. 83 Issue 6, p2988 

    Presents a study which focused on the kinetics of oxygen-hydrogen (0-H) complexes' formation in Czochralski-grown silicon crystals. Details on the temperature in which the silicon crystals were grown; Methodology used to conduct the study; Results of the study.

  • Dynamics of Hydrogen in Silicon. Estreicher, Stefan K. // AIP Conference Proceedings;2003, Vol. 671 Issue 1, p40 

    Hydrogen is a very common impurity which plays many roles hydrogen in crystalline Si. These are briefly reviewed. Several poorly understood issues are discussed, including the states of isolated interstitial hydrogen, the H-enhanced diffusion of oxygen, and the formation of interstitial H[SUB2]...

  • Charged particle activation analysis study of the oxygen outdiffusion from Czochralski-grown silicon during classical and rapid thermal annealing in various gas ambient. Maddalon-Vinante, C.; Barbier, D.; Erramli, H.; Blondiaux, G. // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6115 

    Presents a study which examined the oxygen outdiffusion from Czochralski silicon under oxygen, nitrogen, argon and hydrogen atmospheres. Characteristics of oxygen outdiffusion in Czochralski-silicon wafers; Materials and methods; Description of oxygen in a sample submitted to the classical...

  • Roughening of porous SiCOH materials in fluorocarbon plasmas. Bailly, F.; David, T.; Chevolleau, T.; Darnon, M.; Posseme, N.; Bouyssou, R.; Ducote, J.; Joubert, O.; Cardinaud, C. // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p014906 

    Porous SiCOH materials integration for integrated circuits faces serious challenges such as roughening during the etch process. In this study, atomic force microscopy is used to investigate the kinetics of SiCOH materials roughening when they are etched in fluorocarbon plasmas. We show that the...

  • Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon. Job, R.; Ulyashin, A.G.; Fahrner, W.R.; Ivanov, A.I.; Palmetshofer, L. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 3, p325 

    Abstract. Oxygen and hydrogen accumulations at buried implantation-damage layers were studied alter post-implantation annealing of hydrogen- and helium-implanted Czochralski (Cz) silicon. Hydrogen implantation was carried out at energies E = 180kev and doses D: 2.7 x 10[sup 16] cm[sup -2], and...

  • Characteristic features of the formation of the vibrational distribution function of H[sub 2] molecules in a hydrogen stream. Baksht, F. G.; Ivanov, V. G. // Technical Physics;Jun99, Vol. 44 Issue 6, p621 

    A theoretical analysis is made of the flow of vibrationally excited hydrogen in a channel. It is shown that coverage of the channel walls with adsorbed hydrogen atoms can substantially increase the concentration of vibrationally excited molecules in the stream. The possibility of applying these...

  • Suprathermal oxygen and hydrogen atoms in the upper Martian atmosphere. Shematovich, V. // Solar System Research;Nov2013, Vol. 47 Issue 6, p437 

    The processes of kinetics and transport of hot oxygen and hydrogen atoms in the transition (from the thermosphere to the exosphere) region of the upper Martian atmosphere are studied. The reaction of dissociative recombination of the principal ionospheric ion O with thermal electrons in the...

  • Optical properties of iron-passivated nanoporous silicon. Shevchenko, O. Yu.; Goryachev, D. N.; Belyakov, L. V.; Sreseli, O. M. // Semiconductors;May2010, Vol. 44 Issue 5, p642 

    The intensity of photoluminescence from nanoporous silicon layers produced by electrochemical etching in an aqueous-alcoholic HF solution in the presence of iron ions increases and properties of these layers are stabilized. The optimal FeCl3 concentration in the etching solution has been found....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics