Bipolarity in electrical conduction of transparent oxide semiconductor CuInO[sub 2] with delafossite structure

Yanagi, Hiroshi; Hase, Tomomi; Ibuki, Shuntaro; Ueda, Kazushige; Hosono, Hideo
March 2001
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1583
Academic Journal
A transparent oxide semiconductor with delafossite structure, CuInO[sub 2], was found to exhibit both p-type and n-type conduction by doping of an appropriate impurity and tuning of proper film-deposition conditions. Thin films of Ca-doped or Sn-doped CuInO[sub 2] (optical band gap=∼3.9 eV) were prepared on α-Al[sub 2]O[sub 3](001) single crystal substrates by pulsed laser deposition method. The films were deposited at 723 K in O[sub 2] atmosphere of 1.0 Pa for the Ca-doped films or 1.5 Pa for the Sn-doped films. The positive sign of the Seebeck coefficient demonstrated p-type conduction in the Ca-doped films, while the Seebeck coefficient of the Sn-doped films was negative indicating n-type conductivity. The electrical conductivities of Ca-doped and Sn-doped CuInO[sub 2] thin films were 2.8x10[sup -3] S cm[sup -1] and 3.8x10[sup -3] S cm[sup -1], respectively, at 300 K. © 2001 American Institute of Physics.


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