TITLE

Ballistic electron microscopy study of ultrathin oxidized aluminum barriers for magnetic tunnel junctions

AUTHOR(S)
Rippard, W. H.; Perrella, A. C.; Buhrman, R. A.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1601
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ballistic electron emission microscopy has been used to study thin aluminum oxide tunnel junction barriers formed both by magnetron sputter deposition and thermal evaporation. We have found that the barriers made by oxidation of evaporated Al become fully formed at a significantly thinner mean deposited thickness (∼6 Å) than junctions made by sputter deposition. The effective barrier height of the aluminum oxide has been determined to be 1.22±0.05 eV and is independent of the method of deposition, thickness, and oxidation conditions. © 2001 American Institute of Physics.
ACCESSION #
4715089

 

Related Articles

  • Characterization of aluminum oxyfluoride barrier in magnetic tunnel junctions. Kim, D. S.; Yu, Y. Y.; Char, K. // Journal of Applied Physics;8/15/2004, Vol. 96 Issue 4, p2278 

    The electrical characteristics and the interface structure of magnetic tunnel junctions with aluminum oxyfluoride barrier were studied. Compared to conventional junctions with aluminum oxide tunnel barrier, junctions with aluminum oxyfluoride barrier exhibit larger and nearly constant tunneling...

  • Large inverse magnetoresistance in fully epitaxial Fe/Fe3O4/MgO/Co magnetic tunnel junctions. Greullet, F.; Snoeck, E.; Tiusan, C.; Hehn, M.; Lacour, D.; Lenoble, O.; Magen, C.; Calmels, L. // Applied Physics Letters;2/4/2008, Vol. 92 Issue 5, p053508 

    Fully epitaxial Fe(001)/Fe3O4(001)/MgO(001)/Co micron-sized magnetic tunnel junctions have been elaborated on MgO(001) substrates. X-ray reflectivity and high-resolution transmission electron microscopy revealed a good quality and epitaxial growth of the stack with abrupt interfaces. The...

  • Two breakdown mechanisms in ultrathin alumina barrier magnetic tunnel junctions. Oliver, Bryan; Tuttle, Gary; Qing He; Tang, Xuefei; Nowak, Janusz // Journal of Applied Physics;2/1/2004, Vol. 95 Issue 3, p1315 

    Two breakdown mechanisms are observed in magnetic tunnel junctions having an ultrathin alumina barrier. The two breakdown mechanisms manifest themselves differently when considering large ensembles of nominally identical devices under different stress conditions. The results suggest that one...

  • Inelastic effects in Cr-Cr[sub 2]O[sub 3]-Pb-Sn[sub x]O[sub y]-Pb double tunnel structures. Stepurenko, Yu. I.; Shaternik, V. E.; Rudenko, É. M. // Low Temperature Physics;Jul2000, Vol. 26 Issue 7, p467 

    Cr-Cr[sub 2]O[sub 3]-Pb-Sn[sub x]O[sub y]-Pb double tunnel junctions in which inelastic tunneling processes occur, are fabricated. The change in the superconducting order parameter in the middle Pb film upon variation of the temperature, film thickness, and resistivity of the Cr[sub 2]O[sub 3]...

  • Spin-dependent tunneling in discontinuous Co–SiO[sub 2] magnetic tunnel junctions. Sankar, Sandra; Berkowitz, A. E.; Smith, David J. // Applied Physics Letters;7/27/1998, Vol. 73 Issue 4 

    Discontinuous magnetic tunnel junctions (DMTJs) are an alternate system to the magnetic tunnel junctions (MTJ) currently being considered for magnetoresistance (MR) sensors. The DMTJs are easier to fabricate and more robust than the MTJs. The nominal film structure is SiO[sub 2](20...

  • Dynamics of phonon-assisted tunneling in a silicon degenerate pn junction. Richardson, W. H. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    The charge distribution and junction voltage on an indirect-band-gap semiconductor tunnel junction (that is in parallel with a resistor and current source) were obtained by solution of the master equation. Expressions for the tunneling rate in a silicon degenerate pn junction are presented....

  • Can barriers with inverted tunneling rates lead to subband population inversion? Helm, M.; Allen, S. J. // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1368 

    When the conduction-band edge of the quantum wells in a superlattice is close to the valence-band edge of the barriers, the tunneling probabilities out of the quantum well states can be inverted. We examine if this feature can be exploited to achieve intersubband population inversion. If correct...

  • All refractory light-sensitive superconductive junctions. Granata, C.; Russo, M.; Testa, G. // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3790 

    Presents a study which developed a procedure for fabricating all refractory superconducting tunnel junctions with a semiconducting barrier. Principle behind the procedure; Steps in the procedure; Experimental application and results.

  • Preparation of self-aligned in-line tunnel junctions for applications in single-charge electronics. Götz, M.; Blüthner, K.; Krech, W.; Nowack, A.; Fuchs, H.-J.; Kley, E.-B.; Thieme, P.; Wagner, Th.; Eska, G.; Hecker, K.; Hegger, H. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5499 

    Presents information on a study which applied the self-aligned technique to the preparation of ultrasmall low-capacitance metallic tunnel junctions. Steps of the self-aligned in-line technique; Sample preparation; Experimental results.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics