Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration

Chernyak, Leonid; Klimov, Mikhail
March 2001
Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1613
Academic Journal
An external electric field (up to 10[sup 6] V/cm) was used for nanoscale p-n junction fabrication in Si doped with Li (Si:Li) in situ in a scanning probe microscope. Creation of nano-p-n junctions was ascribed to the thermally assisted electromigration of Li[sup +] ions. Tunneling I-V spectroscopy provided evidence for a conversion of the electrical conductivity type from p to n. A local temperature increase during an electric field-induced p-n junction fabrication was estimated to be up to 160 °C. © 2001 American Institute of Physics.


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