Enhancement of electroluminescence from TiO2/p+-Si heterostructure-based devices through engineering of oxygen vacancies in TiO2

Yuanyuan Zhang; Xiangyang Ma; Peiliang Chen; Dongsheng Li; Xiaodong Pi; Deren Yang; Coleman, P. G.
December 2009
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p252102
Academic Journal
We report that electroluminescence (EL) from TiO2/p+-Si heterostructure-based devices can be significantly enhanced through a prior treatment of TiO2 films in argon (Ar) plasma. It is found that the Ar-plasma treatment introduces excess oxygen vacancies within a certain depth of TiO2 films. The increase in the concentration of oxygen vacancies leads to the enhancement of EL from TiO2/p+-Si heterostructure-based devices because oxygen vacancies are the light-emitting centers. This work demonstrates the use of defect engineering to improve the performance of oxide-based optoelectronic devices.


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