Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator

Cheng Li; Yanghua Chen; Zhiwen Zhou; Hongkai Lai; Songyan Chen
December 2009
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p251102
Academic Journal
An enhancement of the direct bandgap photoluminescence from Ge layer on silicon with boron or phosphorous δ-doping SiGe layers at room temperature is reported. The n-type δ-doping SiGe layer is proposed to transfer extra electrons to L valley in Ge, which decreases the possibility of the excited electrons in the Γ valley to be scattered to the L valley, and improve the photoluminescence of the direct band transition in the Ge layer. Additionally, 2.5 fold enhancement of luminescence from the strained Ge layer on a silicon-on-insulator substrate is demonstrated due to the resonant effect. This investigation is very promising for efficient Si-based Ge light emitting diodes compatible with silicon technology.


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