Altering the nucleation of thermally annealed hydrogenated amorphous silicon with laser processing

Dabney, M. S.; Parilla, P. A.; Gedvilas, L. M.; Mahan, A. H.; Ginley, D. S.
December 2009
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p251902
Academic Journal
We demonstrate the use of laser processing to affect the nucleation of crystallites in thermally annealed hydrogenated amorphous silicon (a-Si:H) thin films. The influence of film H content and subcrystallization threshold laser fluence are investigated by x-ray diffraction measurements during in situ thermal annealing at 600 °C. All laser-treated films show a reduced incubation time for crystallization compared to as-grown films, with the largest differences exhibited for samples with higher film H and higher laser fluences. These results are consistent with multivacancy annihilation by laser processing, based upon a recently developed model for a nucleation center in a-Si:H.


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