Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons

He, Z. B.; Zhang, W. J.; Tang, Y. B.; Wang, H. B.; Cao, Y. L.; Song, H. S.; Bello, I.; Lee, C. S.; Lee, S. T.
December 2009
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p253107
Academic Journal
Crossbar heterojunction arrays of n-CdSe:In nanowires (NWs) and p-Si nanoribbons (NRs) were built by ac electrical field-directed assembly. The junctions showed significant rectifying characteristics. With the p-Si NRs as gates, the junctions function as junction field effect transistors (JFETs) with high stability and reproducibility in performance. A small variation in gate voltage from -2 to -1 V was demonstrated to manipulate the current in n-CdSe:In NW channels by a factor near 103. The JFETs also showed a subthreshold swing value (67 mV/dec) approaching the theoretical limit (60 mV/dec), suggesting the great application potentials of the junctions in integrated nanoelectronics.


Related Articles

  • Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures. Yue Wu; Jie Xiang; Chen Yang; Wei Lu; Lieber, Charles M. // Nature;7/1/2004, Vol. 430 Issue 6995, p61 

    Substantial effort has been placed on developing semiconducting carbon nanotubes and nanowires as building blocks for electronic devices-such as field-effect transistors-that could replace conventional silicon transistors in hybrid electronics or lead to stand-alone nanosystems. Attaching...

  • Ge/Si nanowire heterostructures as high-performance field-effect transistors. Jie Xiang; Wei Lu; Yongjie Hu; Yue Wu; Hao Yan; Lieber, Charles M. // Nature;5/25/2006, Vol. 441 Issue 7092, p489 

    Semiconducting carbon nanotubes and nanowires are potential alternatives to planar metal-oxide-semiconductor field-effect transistors (MOSFETs) owing, for example, to their unique electronic structure and reduced carrier scattering caused by one-dimensional quantum confinement effects. Studies...

  • Enhanced ultraviolet electroluminescence from ZnO nanowires in TiO2/ZnO coaxial nanowires/poly(3,4-ethylenedioxythiophene)-poly(styrene-sulfonate) heterojunction. Lee, Chun-Yu; Wang, Jen-Yi; Chou, Yi; Liu, Meng–Yueh; Su, Wei-Fang; Chen, Yang-Fang; Lin, Ching-Fuh // Journal of Applied Physics;Feb2010, Vol. 107 Issue 3, p034310 

    The ultraviolet (UV) electroluminescence (EL) from the TiO2/ZnO coaxial nanowires (NWs)/poly(3,4-ethylenedioxythiophene)-poly(styrene-sulfonate) inorganic/organic heterostructure devices is greatly enhanced and the defect emission is significantly suppressed compared with the uncoated ZnO NW...

  • Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon. Plissard, S.; Dick, K. A.; Wallart, X.; Caroff, P. // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p121901 

    Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell...

  • Helium-ion damage and nanowire fabrication in GaAs/AlGaAs heterostructures. Knoedler, C. M. // Journal of Applied Physics;8/1/1990, Vol. 68 Issue 3, p1129 

    Presents a study which defined nanometer scale features on GaAs/AlGaAs heterostructure surfaces by electron beam patterning. Experimental procedures; Experimental results and discussion; Discussion on nanowire fabrication.

  • A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission. Klimeck, Gerhard; Boykin, Timothy B.; Luisier, Mathieu; Kharche, Neerav; Schenk, Andreas // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p711 

    Local atomic arrangement in heterostructures or disorder due to alloying, surface roughness and impurities strongly influence the bandstructure and charge transport. With decreasing diameters down to nanometer scales, disorder can no longer be treated in an average manner using the virtual...

  • A Study Of Gate-All-Around Transistors By Electron Tomography. Cherns, P. D.; Lorut, F.; Beçu, S.; Dupré, C.; Tachi, K.; Cooper, D.; Chabli, A.; Ernst, T. // AIP Conference Proceedings;9/28/2009, Vol. 1173 Issue 1, p290 

    Gate-all-around (GAA) SiGe nanowire transistor structures have been studied using high angle annular dark field (HAADF) STEM tomography. Sample preparation has been optimized by isolating single devices in needle-shaped specimens, using annular milling in the focused ion beam (FIB). Using this...

  • The Evolving Role of Experimental Mechanics in 1-D Nanostructure-Based Device Development. Agrawal, R.; Loh, O.; Espinosa, H. D. // Experimental Mechanics;Jan2011, Vol. 51 Issue 1, p1 

    Future generations of transistors, sensors, and other devices maybe revolutionized through the use of one-dimensional nanostructures such as nanowires, nanotubes, and nanorods. The unique properties of these nanostructures will set new benchmarks for speed, sensitivity, functionality, and...

  • Selective-area growth of III-V nanowires and their applications. Tomioka, Katsuhiro; Ikejiri, Keitaro; Tanaka, Tomotaka; Motohisa, Junichi; Hara, Shinjiroh; Hiruma, Kenji; Fukui, Takashi // Journal of Materials Research;9/14/2011, Vol. 26 Issue 17, p2127 

    We review the position-controlled growth of III-V nanowires (NWs) by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). This epitaxial technique enables the positioning of the vertical NWs on (111) oriented surfaces with lithographic techniques. Core-shell structures have also been...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics