TITLE

Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons

AUTHOR(S)
He, Z. B.; Zhang, W. J.; Tang, Y. B.; Wang, H. B.; Cao, Y. L.; Song, H. S.; Bello, I.; Lee, C. S.; Lee, S. T.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p253107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Crossbar heterojunction arrays of n-CdSe:In nanowires (NWs) and p-Si nanoribbons (NRs) were built by ac electrical field-directed assembly. The junctions showed significant rectifying characteristics. With the p-Si NRs as gates, the junctions function as junction field effect transistors (JFETs) with high stability and reproducibility in performance. A small variation in gate voltage from -2 to -1 V was demonstrated to manipulate the current in n-CdSe:In NW channels by a factor near 103. The JFETs also showed a subthreshold swing value (67 mV/dec) approaching the theoretical limit (60 mV/dec), suggesting the great application potentials of the junctions in integrated nanoelectronics.
ACCESSION #
47132828

 

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