TITLE

# An energetic stability predictor of hydrogen-terminated Si nanostructures

AUTHOR(S)
Hu Xu; Yang, X. B.; Guo, C. S.; Zhang, R. Q.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p253106
SOURCE TYPE
DOC. TYPE
Article
ABSTRACT
We present a linear relationship between the cohesive energies and the H/Si ratio for hydrogen-terminated Si semiconductor nanostructures based on our model analysis and first-principles calculations. The H/Si ratio is shown to be a universal predictor of the nanostructureâ€™s energetic stability and allows easily searching of magic numbers in Si quantum dots. Our findings substantially improve the understanding of nanostructure stability and make practical the prediction of structural properties.
ACCESSION #
47132827

## Related Articles

• Quantum beats of fine-structure states in InP quantum dots. Gerlovin, I. Ya.; Ignatĭev, I. V.; Yugova, I. A.; Masumoto, Y. // Optics & Spectroscopy;Apr2008, Vol. 104 Issue 4, p577

Different types of quantum beats were experimentally observed in the photoluminescence kinetics of semiconductor nanostructures with InP quantum dots characterized by strong inhomogeneous broadening of the optical transitions. Specific types of beats were selected by varying the magnitude and...

• Controllable room-temperature metallic quantum dot. Bitton, L.; Frydman, A. // Applied Physics Letters;3/13/2006, Vol. 88 Issue 11, p113113

We demonstrate a technique for fabricating a controllable metallic dot coupled to metallic electrodes. This techniques enables one to explore the current-voltage characteristics while varying the distance between the dot and the leads. The fabrication technique combines atomic force microscope...

• Semianalytical evaluation of linear and nonlinear piezoelectric potentials for quantum nanostructures with axial symmetry. Even, J.; Doré, F.; Cornet, C.; Pedesseau, L.; Schliwa, A.; Bimberg, D. // Applied Physics Letters;9/17/2007, Vol. 91 Issue 12, p122112

A model is proposed to describe the linear and quadratic piezoelectric potentials in quantum nanostructures with axial symmetry. Semianalytical expressions of the charge densities are given to illustrate the symmetry reduction. The results for InAs/InP quantum dots (QDs) are compared to previous...

• Optical routing and switching of energy flow in nanostructure systems. Sadeghi, S. M. // Applied Physics Letters;9/12/2011, Vol. 99 Issue 11, p113113

We study optical routing and switching of energy transfer between semiconductor quantum dots and metallic nanostructures. We demonstrate that in the presence of a metallic nanoshell, one can use quantum coherence to direct or switch energy transfer flow from a quantum dot to another quantum dot...

• Delocalized Dislocations in Quantum Dots. Ovid'ko, I. A.; Sheinerman, A. G. // Journal of Experimental & Theoretical Physics;Feb2004, Vol. 98 Issue 2, p334

A theoretical model describing nucleation of the misfit dislocations with delocalized cores in island films is proposed. The parameters of nanoislands (quantum dots) with such delocalized misfit dislocations in the Ge/Si system are estimated. Within the framework of the proposed model,...

• Time resolved single electron detection in a quantum dot. Schleser, R.; Ruh, E.; Ihn, T.; Ensslin, K.; Driscoll, D. D.; Gossard, A. C. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p775

We have performed transport measurements on a composite nanostructure, consisting of a quantum dot and a nearby quantum point contact (QPC) used as a charge detector. For very low coupling of the dot to only one of the reservoirs and no coupling to the other one, we observe time-dependent...

• Photoresponse in Ge/Si nanostructures with quantum dots. Nikolenko, A. S.; Kondratenko, S. V.; Vakulenko, O. V. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2006, Vol. 9 Issue 1, p32

Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of...

• The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies. Moram, M. A.; Gabbai, U. E.; Sadler, T. C.; Kappers, M. J.; Oliver, R. A. // Journal of Electronic Materials;Jun2010, Vol. 39 Issue 6, p656

Spatial analysis techniques were used to investigate defects and nanostructures in the III-nitride system. Dislocations in GaN films were distributed nonrandomly, forming both short-scale and large-scale linear arrays aligned along $$\langle 11\bar{2}0\rangle .$$ Both low-density InGaN/GaN...

• Deterministic Remote Preparation of Electrons States in Coupled Quantum Dots by Stimulated Raman Adiabatic Passage. Yan Xia; Pei-Min Lu; Jie Song; He-Shan Song // International Journal of Theoretical Physics;Sep2010, Vol. 49 Issue 9, p2045

We present a proposal for deterministic remote preparation of electrons states in a semiconductor nanostructure consisting of a single and a double quantum dot. We show that deterministic remote preparation requires a minimum of only one controlled-Not gate plus one Hadamard gate for the basis...

Share