TITLE

Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress

AUTHOR(S)
Zhen-Ying Hsieh; Mu-Chun Wang; Shuang-Yuan Chen; Chih Chen; Heng-Sheng Huang
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p253503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, a metrology was proposed to realize the distribution of fixed oxide trapped charges and grain boundary trapped states. The (continuous-wave green laser crystallization) n-channel thin-film transistors (TFTs) were forced by dc voltage stress, VG=VD. The gate-to-drain capacitance, CGD-VG, with varying frequency of applied small signal was developed. To probe the distribution of these defects, the difference (initial capacitance values minus stressed capacitance values) of CGD-VG with different frequencies was precisely studied.
ACCESSION #
47132820

 

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