Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress

Zhen-Ying Hsieh; Mu-Chun Wang; Shuang-Yuan Chen; Chih Chen; Heng-Sheng Huang
December 2009
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p253503
Academic Journal
In this work, a metrology was proposed to realize the distribution of fixed oxide trapped charges and grain boundary trapped states. The (continuous-wave green laser crystallization) n-channel thin-film transistors (TFTs) were forced by dc voltage stress, VG=VD. The gate-to-drain capacitance, CGD-VG, with varying frequency of applied small signal was developed. To probe the distribution of these defects, the difference (initial capacitance values minus stressed capacitance values) of CGD-VG with different frequencies was precisely studied.


Related Articles

  • Quasiperiodic grain boundaries and intergranular slip in crystalline and quasinanocrystalline solids. Ovid’ko, I. A. // Physics of the Solid State;Feb97, Vol. 39 Issue 2, p268 

    The interrelationship between the geometrical and plastic characteristics of quasiperiodic grain boundaries in crystals is investigated. The method of density waves is used to obtain a theoretical description of the translational and phason (associated with relative displacements of adjacent...

  • Tougher ultrafine grain Cu via high-angle grain boundaries and low dislocation density. Zhao, Y. H.; Bingert, J. F.; Zhu, Y. T.; Liao, X. Z.; Valiev, R. Z.; Horita, Z.; Langdon, T. G.; Zhou, Y. Z.; Lavernia, E. J. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p081903 

    Although there are a few isolated examples of excellent strength and ductility in single-phase metals with ultrafine grained (UFG) structures, the precise role of different microstructural features responsible for these results is not fully understood. Here, we demonstrate that a large fraction...

  • A new model for radiation-induced grain boundary segregation with grain boundary movement in concentrated alloy system. Sakaguchi, N.; Watanabe, S.; Takahashi, H. // Journal of Materials Science;Feb2005, Vol. 40 Issue 4, p889 

    We have developed a new model for radiation-induced grain boundary migration (RIGM) and radiation-induced segregation (RIS) for austenitic iron-chromium-nickel alloy system. It was assumed that the RIS was induced by diffusional and annihilation processes of excess point defects at the grain...

  • Grain Boundary Sliding and Lattice Dislocation Emission in Nanocrystalline Materials under Plastic Deformation. Gutkin, M. Yu.; Ovid'ko, I. A.; Skiba, N. V. // Physics of the Solid State;Sep2005, Vol. 47 Issue 9, p1662 

    A theoretical model is proposed to describe the physical mechanisms of hardening and softening of nanocrystalline materials during superplastic deformation. According to this model, triple interface junctions are obstacles to glide motion of grain boundary dislocations, which are carriers of...

  • Microstructural Aspects of Grain Boundary Bulge in a Dynamically Recrystallized Mg-Al-Zn Alloy. Sun, D. K.; Chang, C. P.; Kao, P. W. // Metallurgical & Materials Transactions. Part A;Jul2010, Vol. 41 Issue 7, p1864 

    Microstructural features of grain boundary bulging have been studied in a dynamically recrystallized (DRXed) Mg-Al-Zn alloy. Unidirectional compression was used to deform the specimens to different strains at 473 K (200 °C). Microstructural characterization of the deformed specimens was...

  • Thermodynamics of polycrystalline materials treated by the theory of mixtures with continuous diversity. Placidi, Luca; Hutter, Kolumban // Continuum Mechanics & Thermodynamics;Apr2006, Vol. 17 Issue 6, p409 

    The physics of polycrystalline materials is described via microscopic processes such as grain boundary migration, grain growth, grain rotation, polygonization (the bending and breaking of crystallites) and evolution of dislocation density. The importance of taking these processes into account...

  • Elastic moduli of grain boundaries in nanocrystalline MgO ceramics. Yeheskel, Ori; Chaim, Rachman; Zhijian Shen; Nygren, Mats // Journal of Materials Research;Mar2005, Vol. 20 Issue 3, p719 

    Dense MgO ceramics with nanometer to submicrometer grain size were fabricated by high-temperature hot-isostatic pressing, low-temperature hot-pressing, and spark plasma sintering. The elastic properties were determined by sound wave velocity measurements. Young's and shear moduli of...

  • Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding. Yu, X.; Lu, J.; Youssef, K.; Rozgonyi, G. // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p221909 

    We have demonstrated that a direct silicon bonded (110)/(001) interface, fabricated using hybrid orientation technology (HOT), acts as a proximity gettering center for Cu during quench annealing. The Cu gettering efficiency, which increases with annealing temperature, can reach more than 99%....

  • Twinning partial multiplication at grain boundary in nanocrystalline fcc metals. Zhu, Y. T.; Wu, X. L.; Liao, X. Z.; Narayan, J.; Mathaudhu, S. N.; Kecskés, L. J. // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031909 

    Most deformation twins in nanocrystalline face-centered cubic (fcc) metals have been observed to form from grain boundaries. The growth of such twins requires the emission of Shockley partials from the grain boundary on successive slip planes. However, it is statistically improbable for a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics